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- Manufacturer No：MT47H128M8BT-3 L:A
- Manufacturer：
- Category：Memory
- Datasheet：
Get the PDF file - SKU：3920347
- Description：EAR99 Surface Mount MT47H128M8 Tray ic memory 333MHz 450ps 11mm 0.3mA
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- Manufacturer No：MT47H128M8BT-3 L:A
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：MT47H128M8BT-3 L:A
- SKU：3920347
- Description：EAR99 Surface Mount MT47H128M8 Tray ic memory 333MHz 450ps 11mm 0.3mA
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MT47H128M8BT-3 L:A Details
EAR99 Surface Mount MT47H128M8 Tray ic memory 333MHz 450ps 11mm 0.3mA
MT47H128M8BT-3 L:A Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Functions: 1
- ECCN Code: EAR99
- Memory Width: 8
- Qualification Status: Not Qualified
- Reach Compliance Code: unknown
- Time@Peak Reflow Temperature-Max (s): 30
- Power Supplies: 1.8V
- Interleaved Burst Length: 48
- Part Status: Discontinued
- Terminal Pitch: 0.8mm
- Height Seated (Max): 1.2mm
- Output Characteristics: 3-STATE
- Width: 11mm
- Operating Mode: SYNCHRONOUS
- Supply Voltage-Max (Vsup): 1.9V
- Memory Format: DRAM
- Number of Terminations: 92
- Voltage - Supply: 1.7V~1.9V
- Terminal Finish: TIN SILVER COPPER
- Clock Frequency: 333MHz
- Memory Density: 1073741824 bit
- Technology: SDRAM - DDR2
- Organization: 128MX8
- Access Time: 450ps
- Package / Case: 92-VFBGA
- Mounting Type: Surface Mount
- Number of Ports: 1
- Surface Mount: YES
- Packaging: Tray
- Peak Reflow Temperature (Cel): 260
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage: 1.8V
- Published: 2006
- Sequential Burst Length: 48
- Terminal Position: BOTTOM
- Memory Interface: Parallel
- JESD-609 Code: e1
- Memory Type: Volatile
- Supply Voltage-Min (Vsup): 1.7V
- I/O Type: COMMON
- Length: 19mm
- Write Cycle Time - Word, Page: 15ns
- Pin Count: 92
- Refresh Cycles: 8192
- Additional Feature: AUTO/SELF REFRESH
- Supply Current-Max: 0.3mA
- Operating Temperature: 0°C~85°C TC
- Memory Size: 1Gb 128M x 8
- HTS Code: 8542.32.00.32
- Base Part Number: MT47H128M8
- JESD-30 Code: R-PBGA-B92
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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