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- Manufacturer No：2N7002F,215
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：
Get the PDF file - SKU：3943146
- Description：NEXPERIA - 2N7002F,215 - MOSFET, N CHANNEL, 60V, 475MA, 3-SOT-23, FULL REEL
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- Manufacturer No：2N7002F,215
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：2N7002F,215
- SKU：3943146
- Description：NEXPERIA - 2N7002F,215 - MOSFET, N CHANNEL, 60V, 475MA, 3-SOT-23, FULL REEL
User Guide
User Guide
2N7002F,215 Details
NEXPERIA - 2N7002F,215 - MOSFET, N CHANNEL, 60V, 475MA, 3-SOT-23, FULL REEL
2N7002F,215 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Surface Mount: YES
- Part Status: Obsolete
- Number of Terminations: 3
- Pin Count: 3
- Terminal Form: GULL WING
- Drain to Source Voltage (Vdss): 60V
- Time@Peak Reflow Temperature-Max (s): 40
- Terminal Finish: Tin (Sn)
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- Drain-source On Resistance-Max: 2Ohm
- Vgs (Max): ±30V
- HTS Code: 8541.21.00.75
- Feedback Cap-Max (Crss): 10 pF
- Continuous Drain Current (ID): 475mA
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
- Power Dissipation-Max: 830mW Ta
- Mounting Type: Surface Mount
- Number of Elements: 1
- RoHS Status: Non-RoHS Compliant
- JESD-609 Code: e3
- Terminal Position: DUAL
- Number of Pins: 3
- Qualification Status: Not Qualified
- Peak Reflow Temperature (Cel): 260
- DS Breakdown Voltage-Min: 60V
- Published: 2006
- Transistor Element Material: SILICON
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Subcategory: FET General Purpose Power
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- Additional Feature: LOGIC LEVEL COMPATIBLE
- Series: TrenchMOS?
- Drain Current-Max (Abs) (ID): 0.475A
- Rds On (Max) @ Id, Vgs: 2 Ω @ 500mA, 10V
- Gate Charge (Qg) (Max) @ Vgs: 0.69nC @ 10V
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