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- Manufacturer No：BUK7K8R7-40EX
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：
Get the PDF file - SKU：3947626
- Description：MOSFET 2N-CH 40V 30A 56LFPAK
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- 10 $1.526 $15.26
- 100 $1.51 $151
- 1000 $1.495 $1495
- 10000 $1.48 $14800
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- Manufacturer No：BUK7K8R7-40EX
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：BUK7K8R7-40EX
- SKU：3947626
- Description：MOSFET 2N-CH 40V 30A 56LFPAK
User Guide
User Guide
BUK7K8R7-40EX Details
MOSFET 2N-CH 40V 30A 56LFPAK
BUK7K8R7-40EX Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Pin Count: 8
- Published: 2013
- Terminal Form: GULL WING
- FET Feature: Standard
- DS Breakdown Voltage-Min: 40V
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- FET Type: 2 N-Channel (Dual)
- Reference Standard: AEC-Q101; IEC-60134
- Pulsed Drain Current-Max (IDM): 225A
- Power - Max: 53W
- Rds On (Max) @ Id, Vgs: 8.5m Ω @ 15A, 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1439pF @ 25V
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Number of Pins: 8
- Factory Lead Time: 12 Weeks
- Number of Terminations: 6
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 40V
- Continuous Drain Current (ID): 30A
- Operating Temperature: -55°C~175°C TJ
- Case Connection: DRAIN
- JESD-30 Code: R-PDSO-G6
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Max Power Dissipation: 53W
- Package / Case: SOT-1205, 8-LFPAK56
- Gate Charge (Qg) (Max) @ Vgs: 21.8nC @ 10V
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