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- Manufacturer No：BUK9214-30A,118
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：
Get the PDF file - SKU：3945832
- Description：MOSFET N-CH 30V 63A DPAK
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- Manufacturer No：BUK9214-30A,118
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：BUK9214-30A,118
- SKU：3945832
- Description：MOSFET N-CH 30V 63A DPAK
User Guide
User Guide
BUK9214-30A,118 Details
MOSFET N-CH 30V 63A DPAK
BUK9214-30A,118 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- JESD-609 Code: e3
- Number of Pins: 3
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 15V
- Max Dual Supply Voltage: 30V
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Factory Lead Time: 26 Weeks
- Case Connection: DRAIN
- Turn On Delay Time: 10 ns
- Vgs (Max): ±15V
- Series: Automotive, AEC-Q101, TrenchMOS?
- Rise Time: 85ns
- Power Dissipation-Max: 107W Tc
- Power Dissipation: 107W
- Drain-source On Resistance-Max: 0.0155Ohm
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2317pF @ 25V
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Surface Mount: YES
- Contact Plating: Tin
- Pin Count: 3
- Published: 2012
- Time@Peak Reflow Temperature-Max (s): 30
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 30V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- JESD-30 Code: R-PSSO-G2
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Continuous Drain Current (ID): 63A
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Additional Feature: ULTRA LOW RESISTANCE
- Turn-Off Delay Time: 94 ns
- Fall Time (Typ): 108 ns
- Current - Continuous Drain (Id) @ 25°C: 63A Tc
- Rds On (Max) @ Id, Vgs: 12m Ω @ 25A, 10V
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