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- Manufacturer No：PMGD280UN,115
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：
Get the PDF file - SKU：3946250
- Description：MOSFET 2N-CH 20V 0.87A 6TSSOP
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- 10 $0.342 $3.42
- 100 $0.338 $33.8
- 1000 $0.334 $334
- 10000 $0.33 $3300
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- Manufacturer No：PMGD280UN,115
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：PMGD280UN,115
- SKU：3946250
- Description：MOSFET 2N-CH 20V 0.87A 6TSSOP
User Guide
User Guide
PMGD280UN,115 Details
MOSFET 2N-CH 20V 0.87A 6TSSOP
PMGD280UN,115 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Pins: 6
- Terminal Form: GULL WING
- Terminal Finish: Tin (Sn)
- Drain to Source Voltage (Vdss): 20V
- Operating Temperature: -55°C~150°C TJ
- Power Dissipation: 400mW
- Transistor Application: SWITCHING
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- FET Feature: Logic Level Gate
- Vgs(th) (Max) @ Id: 1V @ 250μA
- Series: TrenchMOS?
- Continuous Drain Current (ID): 870mA
- Drain Current-Max (Abs) (ID): 0.87A
- Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 20V
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Packaging: Tape & Reel (TR)
- Surface Mount: YES
- Number of Terminations: 6
- Pin Count: 6
- Factory Lead Time: 4 Weeks
- Transistor Element Material: SILICON
- DS Breakdown Voltage-Min: 20V
- Published: 1997
- Power - Max: 400mW
- Operating Mode: ENHANCEMENT MODE
- Package / Case: 6-TSSOP, SC-88, SOT-363
- FET Type: 2 N-Channel (Dual)
- HTS Code: 8541.29.00.75
- Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Drain-source On Resistance-Max: 0.34Ohm
- Gate Charge (Qg) (Max) @ Vgs: 0.89nC @ 4.5V
- Rds On (Max) @ Id, Vgs: 340m Ω @ 200mA, 4.5V
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