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- Manufacturer No：IS41LV16100B-50KL
- Manufacturer：ISSI, Integrated Silicon Solution Inc
- Category：Memory
- Datasheet：
- SKU：2664145
- Description：Obsolete 3-STATE DUAL Volatile ic memory 0C~70C TA 3V 16Mb 0.002A
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- Manufacturer No：IS41LV16100B-50KL
- Manufacturer：ISSI, Integrated Silicon Solution Inc
- Category：Memory
- Datasheet：IS41LV16100B-50KL
- SKU：2664145
- Description：Obsolete 3-STATE DUAL Volatile ic memory 0C~70C TA 3V 16Mb 0.002A
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User Guide
IS41LV16100B-50KL Details
Obsolete 3-STATE DUAL Volatile ic memory 0C~70C TA 3V 16Mb 0.002A
IS41LV16100B-50KL Specification Parameters
- Self Refresh: NO
- Mount: Surface Mount
- Number of Ports: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Terminal Position: DUAL
- Supply Voltage: 3.3V
- Qualification Status: Not Qualified
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 40
- Terminal Pitch: 1.27mm
- Memory Interface: Parallel
- Output Characteristics: 3-STATE
- Voltage - Supply: 3V~3.6V
- Number of Pins: 42
- Pin Count: 42
- I/O Type: COMMON
- Operating Mode: ASYNCHRONOUS
- Access Time: 25ns
- Standby Current-Max: 0.002A
- Organization: 1MX16
- Memory Size: 16Mb 1M x 16
- Address Bus Width: 10b
- Technology: DRAM - EDO
- Mounting Type: Surface Mount
- Number of Functions: 1
- RoHS Status: RoHS Compliant
- Pbfree Code: yes
- Part Status: Obsolete
- Packaging: Tube
- Operating Supply Voltage: 3.3V
- Memory Width: 16
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage-Min (Vsup): 3V
- Supply Voltage-Max (Vsup): 3.6V
- Operating Temperature: 0°C~70°C TA
- Memory Type: Volatile
- Terminal Finish: Matte Tin (Sn) - annealed
- Number of Terminations: 42
- Data Bus Width: 16b
- Memory Format: DRAM
- Nominal Supply Current: 180mA
- Refresh Cycles: 1024
- Height Seated (Max): 3.75mm
- Density: 16 Mb
- Additional Feature: RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
- Length: 27.305mm
- Package / Case: 42-BSOJ (0.400, 10.16mm Width)
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