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- Manufacturer No：IS42S32800D-75EBI
- Manufacturer：ISSI, Integrated Silicon Solution Inc
- Category：Memory
- Datasheet：
- SKU：2670603
- Description：Obsolete BOTTOM Volatile SYNCHRONOUS ic memory -40C~85C TA 3V 32b 0.003A
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- Manufacturer No：IS42S32800D-75EBI
- Manufacturer：ISSI, Integrated Silicon Solution Inc
- Category：Memory
- Datasheet：IS42S32800D-75EBI
- SKU：2670603
- Description：Obsolete BOTTOM Volatile SYNCHRONOUS ic memory -40C~85C TA 3V 32b 0.003A
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IS42S32800D-75EBI Details
Obsolete BOTTOM Volatile SYNCHRONOUS ic memory -40C~85C TA 3V 32b 0.003A
IS42S32800D-75EBI Specification Parameters
- Mounting Type: Surface Mount
- Number of Ports: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Power Supplies: 3.3V
- Pbfree Code: no
- JESD-609 Code: e0
- Supply Voltage-Min (Vsup): 3V
- Memory Width: 32
- Supply Voltage-Max (Vsup): 3.6V
- Terminal Pitch: 0.8mm
- Height Seated (Max): 1.2mm
- Voltage - Supply: 3V~3.6V
- Number of Pins: 90
- Length: 13mm
- Operating Mode: SYNCHRONOUS
- Clock Frequency: 133MHz
- Refresh Cycles: 4096
- Technology: SDRAM
- Sequential Burst Length: 1248FP
- Memory Density: 268435456 bit
- Package / Case: 90-TFBGA
- Memory Size: 256Mb 8M x 32
- Supply Current-Max: 0.285mA
- Number of Functions: 1
- ECCN Code: EAR99
- Surface Mount: YES
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Supply Voltage: 3.3V
- Packaging: Tray
- Qualification Status: Not Qualified
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Terminal Finish: Tin/Lead (Sn/Pb)
- Operating Temperature: -40°C~85°C TA
- Terminal Position: BOTTOM
- Memory Interface: Parallel
- Memory Type: Volatile
- Number of Terminations: 90
- Pin Count: 90
- Data Bus Width: 32b
- I/O Type: COMMON
- Memory Format: DRAM
- Additional Feature: AUTO/SELF REFRESH
- Interleaved Burst Length: 1248
- Standby Current-Max: 0.003A
- Access Time: 5.5ns
- HTS Code: 8542.32.00.24
- Organization: 8MX32
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