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- Manufacturer No：IS42S32800J-75EBLI
- Manufacturer：ISSI, Integrated Silicon Solution Inc
- Category：Memory
- Datasheet：
Get the PDF file - SKU：2663810
- Description：Active BOTTOM Volatile SYNCHRONOUS ic memory -40C~85C TA 3V 256Mb 13mm
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- Manufacturer No：IS42S32800J-75EBLI
- Manufacturer：ISSI, Integrated Silicon Solution Inc
- Category：Memory
- Datasheet：IS42S32800J-75EBLI
- SKU：2663810
- Description：Active BOTTOM Volatile SYNCHRONOUS ic memory -40C~85C TA 3V 256Mb 13mm
User Guide
User Guide
IS42S32800J-75EBLI Details
Active BOTTOM Volatile SYNCHRONOUS ic memory -40C~85C TA 3V 256Mb 13mm
IS42S32800J-75EBLI Specification Parameters
- Part Status: Active
- Mounting Type: Surface Mount
- Number of Ports: 1
- Pbfree Code: yes
- Factory Lead Time: 8 Weeks
- Operating Supply Voltage: 3.3V
- Peak Reflow Temperature (Cel): 260
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Memory Width: 32
- Supply Voltage-Max (Vsup): 3.6V
- Terminal Pitch: 0.8mm
- Height Seated (Max): 1.2mm
- Voltage - Supply: 3V~3.6V
- Number of Pins: 90
- Length: 13mm
- Clock Frequency: 133MHz
- Access Time: 6ns
- Technology: SDRAM
- Package / Case: 90-TFBGA
- Address Bus Width: 12b
- Organization: 8MX32
- RoHS Status: ROHS3 Compliant
- Number of Functions: 1
- ECCN Code: EAR99
- Surface Mount: YES
- Supply Voltage: 3.3V
- Packaging: Tray
- Time@Peak Reflow Temperature-Max (s): 10
- Supply Voltage-Min (Vsup): 3V
- Operating Temperature: -40°C~85°C TA
- Terminal Position: BOTTOM
- Memory Interface: Parallel
- Memory Type: Volatile
- Number of Terminations: 90
- JESD-609 Code: e2
- Operating Mode: SYNCHRONOUS
- Memory Format: DRAM
- Additional Feature: AUTO/SELF REFRESH
- Density: 256 Mb
- HTS Code: 8542.32.00.24
- Memory Size: 256Mb 8M x 32
- Terminal Finish: Tin/Nickel/Copper (Sn/Ni/Cu)
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