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- Manufacturer No：IS42S81600E-6TLI
- Manufacturer：ISSI, Integrated Silicon Solution Inc
- Category：Memory
- Datasheet：
- SKU：2664140
- Description：Obsolete 3-STATE DUAL Volatile ic memory -40C~85C TA 3V 128Mb 150mA
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- Manufacturer No：IS42S81600E-6TLI
- Manufacturer：ISSI, Integrated Silicon Solution Inc
- Category：Memory
- Datasheet：IS42S81600E-6TLI
- SKU：2664140
- Description：Obsolete 3-STATE DUAL Volatile ic memory -40C~85C TA 3V 128Mb 150mA
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IS42S81600E-6TLI Details
Obsolete 3-STATE DUAL Volatile ic memory -40C~85C TA 3V 128Mb 150mA
IS42S81600E-6TLI Specification Parameters
- Mounting Type: Surface Mount
- Number of Functions: 1
- RoHS Status: RoHS Compliant
- Pbfree Code: yes
- Part Status: Obsolete
- Terminal Position: DUAL
- Operating Supply Voltage: 3.3V
- Qualification Status: Not Qualified
- Time@Peak Reflow Temperature-Max (s): 10
- Supply Voltage-Min (Vsup): 3V
- Supply Voltage-Max (Vsup): 3.6V
- Memory Interface: Parallel
- Nominal Supply Current: 150mA
- Memory Type: Volatile
- Terminal Finish: Matte Tin (Sn) - annealed
- Number of Terminations: 54
- Pin Count: 54
- I/O Type: COMMON
- Clock Frequency: 166MHz
- Additional Feature: AUTO/SELF REFRESH
- Access Time: 5.4ns
- Standby Current-Max: 0.002A
- Memory Size: 128Mb 16M x 8
- Package / Case: 54-TSOP (0.400, 10.16mm Width)
- Density: 128 Mb
- Mount: Surface Mount
- Number of Ports: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Memory Width: 8
- Supply Voltage: 3.3V
- Packaging: Tray
- Peak Reflow Temperature (Cel): 260
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Operating Temperature: -40°C~85°C TA
- Terminal Pitch: 0.8mm
- Height Seated (Max): 1.2mm
- Output Characteristics: 3-STATE
- Voltage - Supply: 3V~3.6V
- Data Bus Width: 8b
- Number of Pins: 54
- Operating Mode: SYNCHRONOUS
- Memory Format: DRAM
- Refresh Cycles: 4096
- Technology: SDRAM
- Length: 22.22mm
- Interleaved Burst Length: 1248
- Sequential Burst Length: 1248FP
- Address Bus Width: 14b
- Organization: 16MX8
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