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- Manufacturer No：IS42VM16160K-6BLI
- Manufacturer：ISSI, Integrated Silicon Solution Inc
- Category：Memory
- Datasheet：
- SKU：2663801
- Description：Active 3-STATE BOTTOM Volatile DRAM Memory -40C~85C TA 1.7V 16b 0.00001A
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- Qty Unit Price price
- 1 $7.659 $7.659
- 10 $7.583 $75.83
- 100 $7.507 $750.7
- 1000 $7.432 $7432
- 10000 $7.358 $73580
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- Manufacturer No：IS42VM16160K-6BLI
- Manufacturer：ISSI, Integrated Silicon Solution Inc
- Category：Memory
- Datasheet：IS42VM16160K-6BLI
- SKU：2663801
- Description：Active 3-STATE BOTTOM Volatile DRAM Memory -40C~85C TA 1.7V 16b 0.00001A
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User Guide
IS42VM16160K-6BLI Details
Active 3-STATE BOTTOM Volatile DRAM Memory -40C~85C TA 1.7V 16b 0.00001A
IS42VM16160K-6BLI Specification Parameters
- Part Status: Active
- Mounting Type: Surface Mount
- Number of Ports: 1
- Factory Lead Time: 12 Weeks
- Qualification Status: Not Qualified
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Power Supplies: 1.8V
- Terminal Position: BOTTOM
- Memory Interface: Parallel
- Output Characteristics: 3-STATE
- Memory Type: Volatile
- Number of Pins: 54
- Data Bus Width: 16b
- I/O Type: COMMON
- Clock Frequency: 166MHz
- Supply Voltage-Max (Vsup): 1.95V
- Voltage - Supply: 1.7V~1.95V
- Sequential Burst Length: 1248FP
- Organization: 16MX16
- Package / Case: 54-TFBGA
- Technology: SDRAM - Mobile
- RoHS Status: ROHS3 Compliant
- Number of Functions: 1
- Surface Mount: YES
- Packaging: Tray
- Memory Width: 16
- Supply Voltage: 1.8V
- Operating Temperature: -40°C~85°C TA
- Terminal Pitch: 0.8mm
- Height Seated (Max): 1.2mm
- Length: 8mm
- Number of Terminations: 54
- Supply Voltage-Min (Vsup): 1.7V
- Operating Mode: SYNCHRONOUS
- Memory Format: DRAM
- Refresh Cycles: 8192
- Standby Current-Max: 0.00001A
- Interleaved Burst Length: 1248
- Memory Size: 256Mb 16M x 16
- Access Time: 5.5ns
- Supply Current-Max: 0.11mA
- Additional Feature: PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
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