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- Manufacturer No：IXFH16N50P
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：
Get the PDF file - SKU：3896348
- Description：MOSFET N-CH 500V 16A TO-247
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- Manufacturer No：IXFH16N50P
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXFH16N50P
- SKU：3896348
- Description：MOSFET N-CH 500V 16A TO-247
User Guide
User Guide
IXFH16N50P Details
MOSFET N-CH 500V 16A TO-247
IXFH16N50P Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Pbfree Code: yes
- Lead Free: Lead Free
- Number of Terminations: 3
- Pin Count: 3
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 500V
- JESD-609 Code: e1
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Current Rating: 16A
- Width: 5.3mm
- Power Dissipation: 300W
- Subcategory: FET General Purpose Power
- Package / Case: TO-247-3
- Additional Feature: AVALANCHE RATED
- Length: 16.26mm
- Power Dissipation-Max: 300W Tc
- Current - Continuous Drain (Id) @ 25?°C: 16A Tc
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
- Operating Temperature: -55?°C~150?°C TJ
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Packaging: Tube
- Number of Pins: 3
- Published: 2006
- Transistor Element Material: SILICON
- Voltage - Rated DC: 500V
- Gate to Source Voltage (Vgs): 30V
- FET Type: N-Channel
- Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Mode: ENHANCEMENT MODE
- Continuous Drain Current (ID): 16A
- Factory Lead Time: 30 Weeks
- Case Connection: DRAIN
- Rise Time: 25 ns
- Turn-Off Delay Time: 70 ns
- Fall Time (Typ): 22 ns
- Turn On Delay Time: 23 ns
- Drain-source On Resistance-Max: 0.4Ohm
- Height: 21.46mm
- Avalanche Energy Rating (Eas): 750 mJ
- Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
- Vgs (Max): ?±30V
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