IXGH30N120B3D1IXYS
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    IXGH30N120B3D1123
    • Manufacturer No：
      IXGH30N120B3D1
    • Manufacturer：
      IXYS
    • Category：
      Transistors - IGBTs - Single
    • Datasheet：
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    • SKU：
      3896204
    • Description：
      IGBT 1200V 300W TO247AD
    • Quantity：
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    Inventory:311
    • Qty Unit Price price
    • 1 $11.752 $11.752
    • 10 $11.635 $116.35
    • 100 $11.519 $1151.9
    • 1000 $11.404 $11404
    • 10000 $11.291 $112910

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    IXGH30N120B3D1
    • Manufacturer No：
      IXGH30N120B3D1
    • Manufacturer：
      IXYS
    • Category：
      Transistors - IGBTs - Single
    • Datasheet：
      IXGH30N120B3D1
    • SKU：
      3896204
    • Description：
      IGBT 1200V 300W TO247AD

    User Guide

    User Guide

    IXGH30N120B3D1 Details

    IGBT 1200V 300W TO247AD

    IXGH30N120B3D1 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Pbfree Code: yes
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Gate-Emitter Thr Voltage-Max: 5V
    • Number of Terminations: 3
    • Pin Count: 3
    • Published: 2008
    • Element Configuration: Single
    • Factory Lead Time: 20 Weeks
    • Operating Temperature: -55°C~150°C TJ
    • Power Dissipation: 300W
    • Max Collector Current: 150A
    • Collector Emitter Voltage (VCEO): 1.2kV
    • Case Connection: COLLECTOR
    • Transistor Application: POWER CONTROL
    • Reverse Recovery Time: 100ns
    • JEDEC-95 Code: TO-247AD
    • Additional Feature: LOW CONDUCTION LOSS
    • Weight: 6.500007g
    • Gate Charge: 87nC
    • Turn Off Time-Nom (toff): 471 ns
    • Switching Energy: 3.47mJ (on), 2.16mJ (off)
    • Test Condition: 960V, 30A, 5 Ω, 15V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Lead Free: Lead Free
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Packaging: Tube
    • Number of Pins: 3
    • Qualification Status: Not Qualified
    • Transistor Element Material: SILICON
    • Input Type: Standard
    • Gate-Emitter Voltage-Max: 20V
    • Max Power Dissipation: 300W
    • Polarity/Channel Type: N-CHANNEL
    • Collector Emitter Breakdown Voltage: 1.2kV
    • Package / Case: TO-247-3
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Subcategory: Insulated Gate BIP Transistors
    • IGBT Type: PT
    • Collector Emitter Saturation Voltage: 2.96V
    • Turn On Time: 56 ns
    • Series: GenX3?
    • Base Part Number: IXG*30N120
    • Td (on/off) @ 25°C: 16ns/127ns
    • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
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