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- Manufacturer No：IXGH6N170A
- Manufacturer：IXYS
- Category：Transistors - IGBTs - Single
- Datasheet：
Get the PDF file - SKU：3910313
- Description：Trans IGBT Chip N-CH 1.7KV 6A 3-Pin(3+Tab) TO-247AD
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- 10000 $11.6 $116000
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- Manufacturer No：IXGH6N170A
- Manufacturer：IXYS
- Category：Transistors - IGBTs - Single
- Datasheet：IXGH6N170A
- SKU：3910313
- Description：Trans IGBT Chip N-CH 1.7KV 6A 3-Pin(3+Tab) TO-247AD
User Guide
User Guide
IXGH6N170A Details
Trans IGBT Chip N-CH 1.7KV 6A 3-Pin(3+Tab) TO-247AD
IXGH6N170A Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Gate-Emitter Thr Voltage-Max: 5V
- Number of Terminations: 3
- Pin Count: 3
- Terminal Finish: Tin (Sn)
- Element Configuration: Single
- Gate-Emitter Voltage-Max: 20V
- Power Dissipation: 75W
- Operating Temperature: -55°C~150°C TJ
- Factory Lead Time: 30 Weeks
- Package / Case: TO-247-3
- Current - Collector Pulsed (Icm): 14A
- Subcategory: Insulated Gate BIP Transistors
- JEDEC-95 Code: TO-247AD
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1700V
- Collector Emitter Voltage (VCEO): 1.7kV
- Weight: 6.500007g
- Td (on/off) @ 25°C: 46ns/220ns
- Turn Off Time-Nom (toff): 271 ns
- Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A
- Base Part Number: IXG*6N170
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Qualification Status: Not Qualified
- Transistor Element Material: SILICON
- Input Type: Standard
- Max Power Dissipation: 75W
- Published: 2003
- Max Collector Current: 6A
- Polarity/Channel Type: N-CHANNEL
- Case Connection: COLLECTOR
- Transistor Application: POWER CONTROL
- Fall Time-Max (tf): 65 ns
- Collector Emitter Saturation Voltage: 5.4V
- Turn-Off Delay Time: 220 ns
- Collector Emitter Breakdown Voltage: 1.7kV
- Turn On Delay Time: 46 ns
- Turn On Time: 91 ns
- Gate Charge: 18.5nC
- Switching Energy: 590μJ (on), 180μJ (off)
- Test Condition: 850V, 6A, 33 Ω, 15V
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