IXGX120N60B3IXYS
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    IXGX120N60B3123
    • Manufacturer No：
      IXGX120N60B3
    • Manufacturer：
      IXYS
    • Category：
      Transistors - IGBTs - Single
    • Datasheet：
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    • SKU：
      3896891
    • Description：
      IGBT 600V 280A 780W PLUS247
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    IXGX120N60B3
    • Manufacturer No：
      IXGX120N60B3
    • Manufacturer：
      IXYS
    • Category：
      Transistors - IGBTs - Single
    • Datasheet：
      IXGX120N60B3
    • SKU：
      3896891
    • Description：
      IGBT 600V 280A 780W PLUS247

    User Guide

    User Guide

    IXGX120N60B3 Details

    IGBT 600V 280A 780W PLUS247

    IXGX120N60B3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Pbfree Code: yes
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Gate-Emitter Thr Voltage-Max: 5V
    • Number of Terminations: 3
    • Pin Count: 3
    • Reach Compliance Code: unknown
    • Published: 2009
    • Element Configuration: Single
    • Collector Emitter Breakdown Voltage: 600V
    • Operating Temperature: -55°C~150°C TJ
    • Collector Emitter Saturation Voltage: 1.5V
    • Polarity/Channel Type: N-CHANNEL
    • Case Connection: COLLECTOR
    • Transistor Application: POWER CONTROL
    • Current - Collector Pulsed (Icm): 600A
    • Power Dissipation: 780W
    • Max Collector Current: 280A
    • Turn Off Time-Nom (toff): 520 ns
    • Base Part Number: IXG*120N60
    • Switching Energy: 2.9mJ (on), 3.5mJ (off)
    • Gate Charge: 465nC
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Lead Free: Lead Free
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Packaging: Tube
    • Number of Pins: 3
    • Qualification Status: Not Qualified
    • Collector Emitter Voltage (VCEO): 1.8V
    • Transistor Element Material: SILICON
    • Input Type: Standard
    • Gate-Emitter Voltage-Max: 20V
    • JESD-609 Code: e1
    • Factory Lead Time: 30 Weeks
    • Package / Case: TO-247-3
    • Terminal Finish: TIN SILVER COPPER
    • Subcategory: Insulated Gate BIP Transistors
    • IGBT Type: PT
    • Max Power Dissipation: 780W
    • Series: GenX3?
    • Turn On Time: 123 ns
    • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
    • Td (on/off) @ 25°C: 40ns/227ns
    • Test Condition: 480V, 100A, 2 Ω, 15V
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