IXTA1N120PIXYS
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    IXTA1N120P123
    • Manufacturer No：
      IXTA1N120P
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      3911164
    • Description：
      MOSFET N-CH 1200V 1A TO-263
    • Quantity：
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    Inventory:96
    • Qty Unit Price price
    • 1 $5.053 $5.053
    • 10 $5.002 $50.02
    • 100 $4.952 $495.2
    • 1000 $4.902 $4902
    • 10000 $4.853 $48530

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    IXTA1N120P
    • Manufacturer No：
      IXTA1N120P
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IXTA1N120P
    • SKU：
      3911164
    • Description：
      MOSFET N-CH 1200V 1A TO-263

    User Guide

    User Guide

    IXTA1N120P Details

    MOSFET N-CH 1200V 1A TO-263

    IXTA1N120P Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • Pbfree Code: yes
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Pin Count: 4
    • Qualification Status: Not Qualified
    • Terminal Finish: Matte Tin (Sn)
    • Drain Current-Max (Abs) (ID): 1A
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Factory Lead Time: 28 Weeks
    • Case Connection: DRAIN
    • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    • Drain to Source Breakdown Voltage: 1.2kV
    • Additional Feature: AVALANCHE RATED
    • Fall Time (Typ): 27 ns
    • Power Dissipation: 63W
    • Avalanche Energy Rating (Eas): 100 mJ
    • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
    • Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 10V
    • Series: PolarVHV?
    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Packaging: Tube
    • Terminal Form: GULL WING
    • Published: 2007
    • Continuous Drain Current (ID): 1A
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • JESD-30 Code: R-PSSO-G2
    • Subcategory: FET General Purpose Power
    • Pulsed Drain Current-Max (IDM): 1.8A
    • Drain to Source Voltage (Vdss): 1200V
    • Rise Time: 28 ns
    • Turn-Off Delay Time: 54 ns
    • Vgs(th) (Max) @ Id: 4.5V @ 50μA
    • Power Dissipation-Max: 63W Tc
    • Current - Continuous Drain (Id) @ 25°C: 1A Tc
    • Rds On (Max) @ Id, Vgs: 20 Ω @ 500mA, 10V
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