IXTA300N04T2-7IXYS
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    IXTA300N04T2-7123
    • Manufacturer No：
      IXTA300N04T2-7
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      3896845
    • Description：
      MOSFET N-CH 40V 300A TO-263
    • Quantity：
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    Inventory:1
    • Qty Unit Price price
    • 1 $5647.097 $5647.097
    • 10 $5591.185 $55911.85
    • 100 $5535.826 $553582.6
    • 1000 $5481.015 $5481015
    • 10000 $5426.747 $54267470

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    IXTA300N04T2-7
    • Manufacturer No：
      IXTA300N04T2-7
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IXTA300N04T2-7
    • SKU：
      3896845
    • Description：
      MOSFET N-CH 40V 300A TO-263

    User Guide

    User Guide

    IXTA300N04T2-7 Details

    MOSFET N-CH 40V 300A TO-263

    IXTA300N04T2-7 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Packaging: Tube
    • Number of Terminations: 6
    • Reach Compliance Code: unknown
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Drain to Source Breakdown Voltage: 40V
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Subcategory: FET General Purpose Power
    • Continuous Drain Current (ID): 300A
    • Power Dissipation: 480W
    • Terminal Finish: PURE TIN
    • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
    • Power Dissipation-Max: 480W Tc
    • Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
    • Current - Continuous Drain (Id) @ 25°C: 300A Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • Pbfree Code: yes
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Pin Count: 4
    • Qualification Status: Not Qualified
    • Terminal Form: GULL WING
    • Published: 2008
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Case Connection: DRAIN
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Additional Feature: AVALANCHE RATED
    • Pulsed Drain Current-Max (IDM): 900A
    • JESD-30 Code: R-PSSO-G6
    • Avalanche Energy Rating (Eas): 600 mJ
    • Drain-source On Resistance-Max: 0.0025Ohm
    • Series: TrenchT2?
    • Rds On (Max) @ Id, Vgs: 2.5m Ω @ 50A, 10V
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