IXTN90N25L2IXYS
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    IXTN90N25L2123
    • Manufacturer No：
      IXTN90N25L2
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      3897005
    • Description：
      MOSFET N-CH 250V 90A SOT-227
    • Quantity：
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    Inventory:297
    • Qty Unit Price price
    • 1 $8413.286 $8413.286
    • 10 $8329.986 $83299.86
    • 100 $8247.51 $824751
    • 1000 $8165.851 $8165851
    • 10000 $8085 $80850000

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    IXTN90N25L2
    • Manufacturer No：
      IXTN90N25L2
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IXTN90N25L2
    • SKU：
      3897005
    • Description：
      MOSFET N-CH 250V 90A SOT-227

    User Guide

    User Guide

    IXTN90N25L2 Details

    MOSFET N-CH 250V 90A SOT-227

    IXTN90N25L2 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • ECCN Code: EAR99
    • Lead Free: Lead Free
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Number of Terminations: 4
    • Packaging: Tube
    • Mounting Type: Chassis Mount
    • Drain to Source Breakdown Voltage: 250V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Factory Lead Time: 28 Weeks
    • Terminal Position: UPPER
    • Continuous Drain Current (ID): 90A
    • Resistance: 33mOhm
    • Pulsed Drain Current-Max (IDM): 360A
    • Additional Feature: AVALANCHE RATED, UL RECOGNIZED
    • Series: Linear L2?
    • Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V
    • Gate Charge (Qg) (Max) @ Vgs: 640nC @ 10V
    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 1
    • Pbfree Code: yes
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Number of Pins: 4
    • Pin Count: 4
    • Qualification Status: Not Qualified
    • Mount: Chassis Mount
    • Published: 2009
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Case Connection: ISOLATED
    • Technology: MOSFET (Metal Oxide)
    • Terminal Form: UNSPECIFIED
    • Vgs (Max): ±20V
    • Subcategory: FET General Purpose Power
    • Terminal Finish: Nickel (Ni)
    • Package / Case: SOT-227-4, miniBLOC
    • Current - Continuous Drain (Id) @ 25°C: 90A Tc
    • Avalanche Energy Rating (Eas): 3000 mJ
    • Power Dissipation: 735W
    • Vgs(th) (Max) @ Id: 4.5V @ 3mA
    • Power Dissipation-Max: 735W Tc
    • Rds On (Max) @ Id, Vgs: 33m Ω @ 500mA, 10V
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