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IXTP18P10T123
  • Manufacturer No:
    IXTP18P10T
  • Manufacturer:
    IXYS
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    3909782
  • Description:
    MOSFET P-CH 100V 18A TO-220
  • Quantity:
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Inventory:2730
  • Qty Unit Price price
  • 1 $457.759 $457.759
  • 10 $453.226 $4532.26
  • 100 $448.738 $44873.8
  • 1000 $444.295 $444295
  • 10000 $439.896 $4398960

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IXTP18P10T
  • Manufacturer No:
    IXTP18P10T
  • Manufacturer:
    IXYS
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IXTP18P10T
  • SKU:
    3909782
  • Description:
    MOSFET P-CH 100V 18A TO-220

IXTP18P10T Details

MOSFET P-CH 100V 18A TO-220

IXTP18P10T Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • ECCN Code: EAR99
  • Lead Free: Lead Free
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Number of Terminations: 3
  • Pin Count: 3
  • Published: 2012
  • DS Breakdown Voltage-Min: 100V
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Terminal Position: SINGLE
  • Operating Temperature: -55°C~150°C TJ
  • Transistor Application: SWITCHING
  • Package / Case: TO-220-3
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • JEDEC-95 Code: TO-220AB
  • FET Type: P-Channel
  • Additional Feature: AVALANCHE RATED
  • Vgs(th) (Max) @ Id: 4.5V @ 250μA
  • Current - Continuous Drain (Id) @ 25°C: 18A Tc
  • Avalanche Energy Rating (Eas): 200 mJ
  • Series: TrenchP?
  • Rds On (Max) @ Id, Vgs: 120m Ω @ 9A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Pbfree Code: yes
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Packaging: Tube
  • Number of Pins: 3
  • Qualification Status: Not Qualified
  • Drain to Source Voltage (Vdss): 100V
  • Reach Compliance Code: unknown
  • Transistor Element Material: SILICON
  • Factory Lead Time: 24 Weeks
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: Other Transistors
  • Case Connection: DRAIN
  • Pulsed Drain Current-Max (IDM): 60A
  • Continuous Drain Current (ID): 18A
  • Vgs (Max): ±15V
  • Drain-source On Resistance-Max: 0.12Ohm
  • Power Dissipation-Max: 83W Tc
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V

Excellent

Based on reviews

Excellent

Based on reviews

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