IXTQ30N60L2IXYS
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    IXTQ30N60L2123
    • Manufacturer No：
      IXTQ30N60L2
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      3896768
    • Description：
      MOSFET N-CH 600V 30A TO-3P
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    IXTQ30N60L2
    • Manufacturer No：
      IXTQ30N60L2
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IXTQ30N60L2
    • SKU：
      3896768
    • Description：
      MOSFET N-CH 600V 30A TO-3P

    User Guide

    User Guide

    IXTQ30N60L2 Details

    MOSFET N-CH 600V 30A TO-3P

    IXTQ30N60L2 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Number of Terminations: 3
    • Pin Count: 3
    • REACH SVHC: No SVHC
    • Threshold Voltage: 2.5V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Drain to Source Voltage (Vdss): 600V
    • Terminal Position: SINGLE
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • Additional Feature: AVALANCHE RATED
    • Nominal Vgs: 2.5 V
    • Power Dissipation: 540W
    • Terminal Finish: PURE TIN
    • Avalanche Energy Rating (Eas): 2000 mJ
    • Series: Linear L2?
    • Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Pbfree Code: yes
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Packaging: Tube
    • Number of Pins: 3
    • Qualification Status: Not Qualified
    • Reach Compliance Code: unknown
    • Published: 2009
    • Transistor Element Material: SILICON
    • DS Breakdown Voltage-Min: 600V
    • Factory Lead Time: 24 Weeks
    • FET Type: N-Channel
    • Continuous Drain Current (ID): 30A
    • Operating Mode: ENHANCEMENT MODE
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Pulsed Drain Current-Max (IDM): 80A
    • Package / Case: TO-3P-3, SC-65-3
    • Vgs(th) (Max) @ Id: 4.5V @ 250μA
    • Current - Continuous Drain (Id) @ 25°C: 30A Tc
    • Drain-source On Resistance-Max: 0.24Ohm
    • Power Dissipation-Max: 540W Tc
    • Rds On (Max) @ Id, Vgs: 240m Ω @ 15A, 10V
    • Gate Charge (Qg) (Max) @ Vgs: 335nC @ 10V
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