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- Manufacturer No：MDI75-12A3
- Manufacturer：IXYS
- Category：Transistors - IGBTs - Modules
- Datasheet：
Get the PDF file - SKU：3897237
- Description：IGBT MODULE 1200V 90A 370W Y4M5
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- 1 $79.946 $79.946
- 10 $79.154 $791.54
- 100 $78.37 $7837
- 1000 $77.594 $77594
- 10000 $76.825 $768250
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- Manufacturer No：MDI75-12A3
- Manufacturer：IXYS
- Category：Transistors - IGBTs - Modules
- Datasheet：MDI75-12A3
- SKU：3897237
- Description：IGBT MODULE 1200V 90A 370W Y4M5
User Guide
User Guide
MDI75-12A3 Details
IGBT MODULE 1200V 90A 370W Y4M5
MDI75-12A3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Pbfree Code: yes
- Lead Free: Lead Free
- Mounting Type: Chassis Mount
- Configuration: Single
- Pin Count: 7
- Gate-Emitter Voltage-Max: 20V
- Case Connection: ISOLATED
- Terminal Form: UNSPECIFIED
- Factory Lead Time: 32 Weeks
- Operating Temperature: -40°C~150°C TJ
- Polarity/Channel Type: N-CHANNEL
- Collector Emitter Voltage (VCEO): 1.2kV
- Input Capacitance: 3.3nF
- Transistor Application: POWER CONTROL
- Subcategory: Insulated Gate BIP Transistors
- VCEsat-Max: 3 V
- IGBT Type: NPT
- JESD-30 Code: R-XUFM-X5
- Power - Max: 370W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
- Base Part Number: MDI
- RoHS Status: ROHS3 Compliant
- Number of Elements: 1
- NTC Thermistor: No
- Number of Terminations: 5
- Transistor Element Material: SILICON
- Input: Standard
- Number of Pins: 7
- Published: 2000
- Height: 30mm
- Additional Feature: UL RECOGNIZED
- Current - Collector Cutoff (Max): 4mA
- Terminal Position: UPPER
- Collector Emitter Breakdown Voltage: 1.2kV
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Max Collector Current: 90A
- Width: 34mm
- Mount: Chassis Mount, Panel
- Length: 94mm
- Turn On Time: 170 ns
- Max Power Dissipation: 370W
- Turn Off Time-Nom (toff): 570 ns
- Input Capacitance (Cies) @ Vce: 3.3nF @ 25V
- Package / Case: Y4-M5
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