BC858AE6327HTSA1Infineon
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    BC858AE6327HTSA1123
    • Manufacturer No：
      BC858AE6327HTSA1
    • Manufacturer：
      Infineon
    • Category：
      Transistors - Bipolar (BJT) - Single
    • Datasheet：
    • SKU：
      3632706
    • Description：
      Bipolar (BJT) Transistor PNP 30 V 100 mA 250MHz 330 mW Surface Mount SOT-23-3
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    BC858AE6327HTSA1
    • Manufacturer No：
      BC858AE6327HTSA1
    • Manufacturer：
      Infineon
    • Category：
      Transistors - Bipolar (BJT) - Single
    • Datasheet：
      BC858AE6327HTSA1
    • SKU：
      3632706
    • Description：
      Bipolar (BJT) Transistor PNP 30 V 100 mA 250MHz 330 mW Surface Mount SOT-23-3

    User Guide

    User Guide

    BC858AE6327HTSA1 Details

    Bipolar (BJT) Transistor PNP 30 V 100 mA 250MHz 330 mW Surface Mount SOT-23-3

    BC858AE6327HTSA1 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Terminal Position: DUAL
    • Number of Terminations: 3
    • Qualification Status: Not Qualified
    • Terminal Finish: Tin (Sn)
    • Transistor Element Material: SILICON
    • Collector Emitter Breakdown Voltage: 30V
    • Collector Base Voltage (VCBO): 30V
    • Max Collector Current: 100mA
    • Length: 2.9mm
    • Transistor Application: SWITCHING
    • Transition Frequency: 250MHz
    • Max Frequency: 250MHz
    • Polarity/Channel Type: PNP
    • Operating Temperature: 150°C TJ
    • Voltage - Rated DC: -30V
    • Current - Collector Cutoff (Max): 15nA ICBO
    • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
    • Base Part Number: BC858
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • Pbfree Code: yes
    • Lead Free: Lead Free
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Emitter Base Voltage (VEBO): 5V
    • Number of Pins: 3
    • Terminal Form: GULL WING
    • Published: 2005
    • Element Configuration: Single
    • Collector Emitter Voltage (VCEO): 30V
    • Part Status: Not For New Designs
    • Current - Collector (Ic) (Max): 100mA
    • Width: 1.3mm
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Gain Bandwidth Product: 250MHz
    • Transistor Type: PNP
    • Height: 900μm
    • Max Power Dissipation: 330mW
    • Current Rating: -100mA
    • Collector Emitter Saturation Voltage: 650mV
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA 5V
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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