BSB028N06NN3GXUMA1Infineon
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    Inventory:40
    • Qty Unit Price price
    • 1 $3.069 $3.069
    • 10 $3.038 $30.38
    • 100 $3.007 $300.7
    • 1000 $2.977 $2977
    • 10000 $2.947 $29470

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    BSB028N06NN3GXUMA1
    • Manufacturer No：
      BSB028N06NN3GXUMA1
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      BSB028N06NN3GXUMA1
    • SKU：
      2656381
    • Description：
      MOSFET N-CH 60V 22A WDSON-2

    User Guide

    User Guide

    BSB028N06NN3GXUMA1 Details

    MOSFET N-CH 60V 22A WDSON-2

    BSB028N06NN3GXUMA1 Specification Parameters

    • Part Status: Active
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • Pbfree Code: yes
    • Lead Free: Lead Free
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Number of Terminations: 3
    • Qualification Status: Not Qualified
    • Published: 2012
    • Moisture Sensitivity Level (MSL): 3 (168 Hours)
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Number of Pins: 7
    • Terminal Position: BOTTOM
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Factory Lead Time: 26 Weeks
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Operating Temperature: -40°C~150°C TJ
    • Fall Time (Typ): 6 ns
    • Continuous Drain Current (ID): 90A
    • Turn On Delay Time: 21 ns
    • Pulsed Drain Current-Max (IDM): 360A
    • Drain-source On Resistance-Max: 0.0028Ohm
    • Package / Case: 3-WDSON
    • JESD-30 Code: R-MBCC-N3
    • Rds On (Max) @ Id, Vgs: 2.8m Ω @ 30A, 10V
    • Current - Continuous Drain (Id) @ 25°C: 22A Ta 90A Tc
    • RoHS Status: ROHS3 Compliant
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • Surface Mount: YES
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • JESD-609 Code: e4
    • Pin Count: 3
    • REACH SVHC: No SVHC
    • Drain to Source Breakdown Voltage: 60V
    • Threshold Voltage: 3V
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Terminal Form: NO LEAD
    • Technology: MOSFET (Metal Oxide)
    • Halogen Free: Halogen Free
    • Drain Current-Max (Abs) (ID): 22A
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • Subcategory: FET General Purpose Power
    • Rise Time: 9 ns
    • Series: OptiMOS?
    • Turn-Off Delay Time: 38 ns
    • Power Dissipation: 78W
    • Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
    • Terminal Finish: Silver/Nickel (Ag/Ni)
    • Avalanche Energy Rating (Eas): 590 mJ
    • Power Dissipation-Max: 2.2W Ta 78W Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 30V
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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