BSC750N10ND GInfineon
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    BSC750N10ND G123
    Inventory:10
    • Qty Unit Price price
    • 1 $0.615 $0.615
    • 10 $0.608 $6.08
    • 100 $0.601 $60.1
    • 1000 $0.595 $595
    • 10000 $0.589 $5890

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    BSC750N10ND G
    • Manufacturer No：
      BSC750N10ND G
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      BSC750N10ND G
    • SKU：
      10990360
    • Description：

    User Guide

    User Guide

    BSC750N10ND G Details

    BSC750N10ND G Specification Parameters

    • Number of Elements: 2
    • RoHS Status: RoHS Compliant
    • Surface Mount: YES
    • Pin Count: 8
    • Qualification Status: Not Qualified
    • Peak Reflow Temperature (Cel): 260
    • Terminal Finish: Matte Tin (Sn)
    • Operating Temperature (Max): 150°C
    • Reach Compliance Code: compliant
    • Terminal Form: FLAT
    • Operating Mode: ENHANCEMENT MODE
    • Subcategory: FET General Purpose Power
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Additional Feature: AVALANCHE RATED
    • Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
    • Power Dissipation-Max (Abs): 26W
    • Avalanche Energy Rating (Eas): 17 mJ
    • Moisture Sensitivity Level (MSL): 1
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Terminal Position: DUAL
    • Number of Terminals: 6
    • DS Breakdown Voltage-Min: 100V
    • Time@Peak Reflow Temperature-Max (s): 40
    • Transistor Element Material: SILICON
    • Drain Current-Max (Abs) (ID): 13A
    • Transistor Application: SWITCHING
    • Case Connection: DRAIN
    • Polarity/Channel Type: N-CHANNEL
    • Pbfree Code: icon-pbfree yes
    • JESD-30 Code: R-PDSO-F6
    • Pulsed Drain Current-Max (IDM): 52A
    • Drain-source On Resistance-Max: 0.075Ohm
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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