BSZ105N04NSGATMA1Infineon
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    BSZ105N04NSGATMA1123
    • Manufacturer No：
      BSZ105N04NSGATMA1
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
    • SKU：
      2664038
    • Description：
      N-Channel 40 V 11A (Ta), 40A (Tc) 2.1W (Ta), 35W (Tc) Surface Mount PG-TSDSON-8
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    Inventory:35758
    • Qty Unit Price price
    • 1 $38.9 $38.9
    • 10 $38.514 $385.14
    • 100 $38.132 $3813.2
    • 1000 $37.754 $37754
    • 10000 $37.38 $373800

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    BSZ105N04NSGATMA1
    • Manufacturer No：
      BSZ105N04NSGATMA1
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      BSZ105N04NSGATMA1
    • SKU：
      2664038
    • Description：
      N-Channel 40 V 11A (Ta), 40A (Tc) 2.1W (Ta), 35W (Tc) Surface Mount PG-TSDSON-8

    User Guide

    User Guide

    BSZ105N04NSGATMA1 Details

    N-Channel 40 V 11A (Ta), 40A (Tc) 2.1W (Ta), 35W (Tc) Surface Mount PG-TSDSON-8

    BSZ105N04NSGATMA1 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Part Status: Obsolete
    • Pin Count: 8
    • Pbfree Code: no
    • Number of Terminations: 5
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Gate to Source Voltage (Vgs): 20V
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Halogen Free: Halogen Free
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • Turn On Delay Time: 7 ns
    • Series: OptiMOS?
    • Package / Case: 8-PowerTDFN
    • Fall Time (Typ): 2.6 ns
    • JESD-30 Code: S-PDSO-N5
    • Rds On (Max) @ Id, Vgs: 10.5m Ω @ 20A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 14μA
    • Power Dissipation-Max: 2.1W Ta 35W Tc
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • Radiation Hardening: No
    • Contact Plating: Tin
    • Number of Pins: 8
    • Terminal Position: DUAL
    • Lead Free: Contains Lead
    • Published: 2011
    • Transistor Element Material: SILICON
    • Max Dual Supply Voltage: 40V
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Continuous Drain Current (ID): 11A
    • Power Dissipation: 35W
    • Turn-Off Delay Time: 9.5 ns
    • Rise Time: 1.2ns
    • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
    • Avalanche Energy Rating (Eas): 20 mJ
    • Current - Continuous Drain (Id) @ 25°C: 11A Ta 40A Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 20V
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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