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- Manufacturer No：IKW50N60DTPXKSA1
- Manufacturer：
- Category：Transistors - IGBTs - Single
- Datasheet：
- SKU：2677645
- Description：IGBT Trench Field Stop 600 V 80 A 319.2 W Through Hole PG-TO247-3
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- Manufacturer No：IKW50N60DTPXKSA1
- Manufacturer：Infineon
- Category：Transistors - IGBTs - Single
- Datasheet：IKW50N60DTPXKSA1
- SKU：2677645
- Description：IGBT Trench Field Stop 600 V 80 A 319.2 W Through Hole PG-TO247-3
User Guide
User Guide
IKW50N60DTPXKSA1 Details
IGBT Trench Field Stop 600 V 80 A 319.2 W Through Hole PG-TO247-3
IKW50N60DTPXKSA1 Specification Parameters
- Part Status: Active
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- Moisture Sensitivity Level (MSL): Not Applicable
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Factory Lead Time: 16 Weeks
- Terminal Finish: Tin (Sn)
- Input Type: Standard
- Terminal Position: SINGLE
- Polarity/Channel Type: N-CHANNEL
- Max Collector Current: 80A
- Package / Case: TO-247-3
- Transistor Application: POWER CONTROL
- Operating Temperature: -40°C~175°C TJ
- Series: TrenchStop?
- Test Condition: 400V, 50A, 7 Ω, 15V
- Max Power Dissipation: 319.2W
- Td (on/off) @ 25°C: 20ns/215ns
- Turn Off Time-Nom (toff): 332 ns
- RoHS Status: ROHS3 Compliant
- Mount: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Published: 2016
- Collector Emitter Voltage (VCEO): 1.8V
- Transistor Element Material: SILICON
- Collector Emitter Breakdown Voltage: 600V
- Configuration: SINGLE WITH BUILT-IN DIODE
- Current - Collector Pulsed (Icm): 150A
- JESD-30 Code: R-PSFM-T3
- Turn On Time: 55 ns
- IGBT Type: Trench Field Stop
- Reverse Recovery Time: 115 ns
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
- Power - Max: 319.2W
- Switching Energy: 1.53mJ (on), 850μJ (off)
- Gate Charge: 249nC
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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