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IPB055N03LGATMA1123
Inventory:2326
  • Qty Unit Price price
  • 1 $3.784 $3.784
  • 10 $3.746 $37.46
  • 100 $3.708 $370.8
  • 1000 $3.671 $3671
  • 10000 $3.634 $36340

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IPB055N03LGATMA1
  • Manufacturer No:
    IPB055N03LGATMA1
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IPB055N03LGATMA1
  • SKU:
    2664172
  • Description:
    Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-263

IPB055N03LGATMA1 Details

Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-263

IPB055N03LGATMA1 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • JESD-609 Code: e3
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Factory Lead Time: 12 Weeks
  • Number of Pins: 3
  • Qualification Status: Not Qualified
  • REACH SVHC: No SVHC
  • Terminal Finish: Tin (Sn)
  • Terminal Position: SINGLE
  • Drain to Source Voltage (Vdss): 30V
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • JESD-30 Code: R-PSSO-G2
  • Case Connection: DRAIN
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Fall Time (Typ): 4 ns
  • Vgs(th) (Max) @ Id: 2.2V @ 250μA
  • Rise Time: 5.2 ns
  • Additional Feature: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
  • Power Dissipation: 68W
  • Power Dissipation-Max: 68W Tc
  • Rds On (Max) @ Id, Vgs: 5.5m Ω @ 30A, 10V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Part Status: Obsolete
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Pin Count: 4
  • Pbfree Code: no
  • Terminal Form: GULL WING
  • Published: 2008
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Continuous Drain Current (ID): 50A
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Turn-Off Delay Time: 25 ns
  • Series: OptiMOS?
  • Turn On Delay Time: 6.7 ns
  • Current - Continuous Drain (Id) @ 25°C: 50A Tc
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Avalanche Energy Rating (Eas): 60 mJ
  • Drain-source On Resistance-Max: 0.0078Ohm
  • Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 15V

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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