IPB26CNE8N GInfineon
    Add to like
    Add to project list
    IPB26CNE8N G123
    Inventory:48
    • Qty Unit Price price
    • 1 $27.864 $27.864
    • 10 $27.588 $275.88
    • 100 $27.314 $2731.4
    • 1000 $27.043 $27043
    • 10000 $26.775 $267750

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    IPB26CNE8N G
    • Manufacturer No：
      IPB26CNE8N G
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IPB26CNE8N G
    • SKU：
      2679652
    • Description：
      MOSFET N-CH 85V 35A TO263-3

    User Guide

    User Guide

    IPB26CNE8N G Details

    MOSFET N-CH 85V 35A TO263-3

    IPB26CNE8N G Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Qualification Status: Not Qualified
    • Published: 2006
    • Transistor Element Material: SILICON
    • Part Status: Discontinued
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Drain to Source Voltage (Vdss): 85V
    • JESD-30 Code: R-PSSO-G2
    • Case Connection: DRAIN
    • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    • Series: OptiMOS?
    • Current - Continuous Drain (Id) @ 25°C: 35A Tc
    • Power Dissipation-Max: 71W Tc
    • Avalanche Energy Rating (Eas): 65 mJ
    • Rds On (Max) @ Id, Vgs: 26m Ω @ 35A, 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • Surface Mount: YES
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Pin Count: 4
    • Terminal Form: GULL WING
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Terminal Position: SINGLE
    • Terminal Finish: MATTE TIN
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • DS Breakdown Voltage-Min: 85V
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Subcategory: FET General Purpose Power
    • Drain Current-Max (Abs) (ID): 35A
    • Pulsed Drain Current-Max (IDM): 140A
    • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
    • Drain-source On Resistance-Max: 0.026Ohm
    • Vgs(th) (Max) @ Id: 4V @ 39μA
    • Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 40V
    Search for similar products

    IPB26CNE8N G Similar Products

    The four parts on the right have similar specifications to Infineon & IPB26CNE8N G

    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via