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  • Manufacturer No:
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
  • SKU:
  • Description:
    N-Channel 650 V 20.2A (Tc) 151W (Tc) Surface Mount D?PAK (TO-263AB)

IPB65R190C6ATMA1 Details

N-Channel 650 V 20.2A (Tc) 151W (Tc) Surface Mount D?PAK (TO-263AB)

IPB65R190C6ATMA1 Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • Surface Mount: YES
  • Part Status: Obsolete
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Pbfree Code: no
  • Terminal Form: GULL WING
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Transistor Element Material: SILICON
  • Published: 2004
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • DS Breakdown Voltage-Min: 650V
  • Pulsed Drain Current-Max (IDM): 66A
  • Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
  • Current - Continuous Drain (Id) @ 25°C: 20.2A Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 100V
  • Vgs(th) (Max) @ Id: 3.5V @ 730μA
  • Number of Terminations: 2
  • Packaging: Tape & Reel (TR)
  • RoHS Status: RoHS Compliant
  • JESD-609 Code: e3
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Pin Count: 4
  • Qualification Status: Not Qualified
  • Reach Compliance Code: not_compliant
  • Terminal Finish: Tin (Sn)
  • Terminal Position: SINGLE
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • JESD-30 Code: R-PSSO-G2
  • Case Connection: DRAIN
  • Drain to Source Voltage (Vdss): 650V
  • Series: CoolMOS?
  • Drain-source On Resistance-Max: 0.19Ohm
  • Power Dissipation-Max: 151W Tc
  • Rds On (Max) @ Id, Vgs: 190m Ω @ 7.3A, 10V
  • Avalanche Energy Rating (Eas): 485 mJ

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.


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