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IPD80R2K8CEATMA1123
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IPD80R2K8CEATMA1
  • Manufacturer No:
    IPD80R2K8CEATMA1
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IPD80R2K8CEATMA1
  • SKU:
    6460112
  • Description:
    N-Channel 800 V 1.9A (Tc) 42W (Tc) Surface Mount PG-TO252-3

IPD80R2K8CEATMA1 Details

N-Channel 800 V 1.9A (Tc) 42W (Tc) Surface Mount PG-TO252-3

IPD80R2K8CEATMA1 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Channels: 1
  • Min Operating Temperature: -55°C
  • Max Operating Temperature: 150°C
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Rise Time: 15ns
  • Fall Time (Typ): 18 ns
  • Weight: 3.949996g
  • Supplier Device Package: PG-TO252-3
  • Power Dissipation-Max: 42W Tc
  • Input Capacitance: 290pF
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 100V
  • Rds On Max: 2.8 Ω
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Lead Free: Lead Free
  • Number of Pins: 3
  • Published: 2008
  • Factory Lead Time: 18 Weeks
  • Gate to Source Voltage (Vgs): 30V
  • FET Type: N-Channel
  • Vgs (Max): ±20V
  • Max Dual Supply Voltage: 800V
  • Turn On Delay Time: 25 ns
  • Continuous Drain Current (ID): 1.9A
  • Drain to Source Resistance: 2.4Ohm
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Turn-Off Delay Time: 72 ns
  • Series: CoolMOS? CE
  • Current - Continuous Drain (Id) @ 25°C: 1.9A Tc
  • Vgs(th) (Max) @ Id: 3.9V @ 120μA
  • Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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