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IPL60R2K1C6SATMA1123
Inventory:3176
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  • 100 $0.91 $91
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IPL60R2K1C6SATMA1
  • Manufacturer No:
    IPL60R2K1C6SATMA1
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IPL60R2K1C6SATMA1
  • SKU:
    2664055
  • Description:
    N-Channel 600 V 2.3A (Tc) 21.6W (Tc) Surface Mount Thin-PAK (5x6)

IPL60R2K1C6SATMA1 Details

N-Channel 600 V 2.3A (Tc) 21.6W (Tc) Surface Mount Thin-PAK (5x6)

IPL60R2K1C6SATMA1 Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Channels: 1
  • Pbfree Code: yes
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Number of Pins: 8
  • Lead Free: Contains Lead
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Drain to Source Breakdown Voltage: 600V
  • Gate to Source Voltage (Vgs): 30V
  • Technology: MOSFET (Metal Oxide)
  • Vgs (Max): ±20V
  • Fall Time (Typ): 50 ns
  • Turn-Off Delay Time: 30 ns
  • Turn On Delay Time: 7 ns
  • Weight: 75.891673mg
  • Vgs(th) (Max) @ Id: 3.5V @ 60μA
  • Current - Continuous Drain (Id) @ 25°C: 2.3A Tc
  • Rds On (Max) @ Id, Vgs: 2.1 Ω @ 760mA, 10V
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • RoHS Status: RoHS Compliant
  • Part Status: Obsolete
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Factory Lead Time: 12 Weeks
  • Published: 2008
  • Element Configuration: Single
  • Max Dual Supply Voltage: 600V
  • FET Type: N-Channel
  • Halogen Free: Halogen Free
  • Operating Temperature: -40°C~150°C TJ
  • Rise Time: 7ns
  • Continuous Drain Current (ID): 2.3A
  • Package / Case: 8-PowerTDFN
  • Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
  • Series: CoolMOS? C6
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V
  • Power Dissipation-Max: 21.6W Tc

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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