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IPP04CN10NGXKSA1123
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IPP04CN10NGXKSA1
  • Manufacturer No:
    IPP04CN10NGXKSA1
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IPP04CN10NGXKSA1
  • SKU:
    2683332
  • Description:
    MOSFET MV POWER MOS

IPP04CN10NGXKSA1 Details

MOSFET MV POWER MOS

IPP04CN10NGXKSA1 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mount: Through Hole
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Min Operating Temperature: -55°C
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Number of Pins: 3
  • Qualification Status: Not Qualified
  • Drain to Source Voltage (Vdss): 100V
  • Max Dual Supply Voltage: 100V
  • Max Operating Temperature: 175°C
  • Terminal Finish: Tin (Sn)
  • Gate to Source Voltage (Vgs): 20V
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Max Power Dissipation: 300W
  • Polarity/Channel Type: N-CHANNEL
  • Fall Time (Typ): 25 ns
  • Package / Case: TO-220
  • Avalanche Energy Rating (Eas): 1000 mJ
  • Drain to Source Resistance: 3.9mOhm
  • Rds On Max: 4.2 mΩ
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Number of Elements: 1
  • Pbfree Code: yes
  • Lead Free: Lead Free
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Number of Terminations: 3
  • Pin Count: 3
  • REACH SVHC: No SVHC
  • Drain to Source Breakdown Voltage: 100V
  • Threshold Voltage: 3V
  • Published: 2008
  • Element Configuration: Single
  • Part Status: Not For New Designs
  • Halogen Free: Halogen Free
  • Continuous Drain Current (ID): 100A
  • Power Dissipation: 300W
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Pulsed Drain Current-Max (IDM): 400A
  • Turn On Delay Time: 34 ns
  • Turn-Off Delay Time: 76 ns
  • Rise Time: 78ns
  • Input Capacitance: 13.8nF

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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