IPP50R299CPXKSA1Infineon
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    Inventory:25103
    • Qty Unit Price price
    • 1 $4.364 $4.364
    • 10 $4.32 $43.2
    • 100 $4.277 $427.7
    • 1000 $4.234 $4234
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    IPP50R299CPXKSA1
    • Manufacturer No：
      IPP50R299CPXKSA1
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IPP50R299CPXKSA1
    • SKU：
      2681822
    • Description：
      N-Channel 550 V 12A (Tc) 104W (Tc) Through Hole PG-TO220-3-1

    User Guide

    User Guide

    IPP50R299CPXKSA1 Details

    N-Channel 550 V 12A (Tc) 104W (Tc) Through Hole PG-TO220-3-1

    IPP50R299CPXKSA1 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Pbfree Code: yes
    • Lead Free: Lead Free
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Packaging: Tube
    • Number of Pins: 3
    • Qualification Status: Not Qualified
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Transistor Element Material: SILICON
    • Drain to Source Breakdown Voltage: 500V
    • Gate to Source Voltage (Vgs): 20V
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Continuous Drain Current (ID): 12A
    • Halogen Free: Halogen Free
    • Vgs (Max): ±20V
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • JEDEC-95 Code: TO-220AB
    • Fall Time (Typ): 12 ns
    • Turn-Off Delay Time: 80 ns
    • Series: CoolMOS?
    • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
    • Power Dissipation: 104W
    • Drain-source On Resistance-Max: 0.299Ohm
    • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 100V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Factory Lead Time: 12 Weeks
    • Number of Terminations: 3
    • Pin Count: 3
    • Published: 2008
    • Terminal Finish: Tin (Sn)
    • Terminal Position: SINGLE
    • Max Dual Supply Voltage: 500V
    • Part Status: Last Time Buy
    • Case Connection: ISOLATED
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Package / Case: TO-220-3
    • Drain to Source Voltage (Vdss): 550V
    • Turn On Delay Time: 35 ns
    • Rise Time: 14 ns
    • Pulsed Drain Current-Max (IDM): 26A
    • Current - Continuous Drain (Id) @ 25°C: 12A Tc
    • Power Dissipation-Max: 104W Tc
    • Vgs(th) (Max) @ Id: 3.5V @ 440μA
    • Rds On (Max) @ Id, Vgs: 299m Ω @ 6.6A, 10V
    • Avalanche Energy Rating (Eas): 289 mJ
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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