Add to like
Add to project list
123
- Home >
- Manufacturer No：IPU50R950CEAKMA2
- Manufacturer：
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：
- SKU：2702193
- Description：N-Channel 500 V 4.3A (Tc) 53W (Tc) Through Hole PG-TO251-3
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:194
- Qty Unit Price price
- 1 $0.572 $0.572
- 10 $0.566 $5.66
- 100 $0.56 $56
- 1000 $0.554 $554
- 10000 $0.548 $5480
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：IPU50R950CEAKMA2
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IPU50R950CEAKMA2
- SKU：2702193
- Description：N-Channel 500 V 4.3A (Tc) 53W (Tc) Through Hole PG-TO251-3
User Guide
User Guide
IPU50R950CEAKMA2 Details
N-Channel 500 V 4.3A (Tc) 53W (Tc) Through Hole PG-TO251-3
IPU50R950CEAKMA2 Specification Parameters
- Surface Mount: NO
- Mounting Type: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Packaging: Tube
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Published: 2008
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 500V
- Part Status: Discontinued
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Drive Voltage (Max Rds On,Min Rds On): 13V
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Series: CoolMOS? CE
- Current - Continuous Drain (Id) @ 25°C: 4.3A Tc
- Avalanche Energy Rating (Eas): 68 mJ
- Vgs(th) (Max) @ Id: 3.5V @ 100μA
- Rds On (Max) @ Id, Vgs: 950m Ω @ 1.2A, 13V
- RoHS Status: ROHS3 Compliant
- Number of Elements: 1
- Pbfree Code: yes
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Factory Lead Time: 6 Weeks
- Number of Terminations: 3
- Reach Compliance Code: not_compliant
- Terminal Finish: Tin (Sn)
- Terminal Position: SINGLE
- DS Breakdown Voltage-Min: 500V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- JESD-30 Code: R-PSIP-T3
- Pulsed Drain Current-Max (IDM): 12.8A
- Drain-source On Resistance-Max: 0.95Ohm
- Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
- Power Dissipation-Max: 53W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 231pF @ 100V
Search for similar products
IPU50R950CEAKMA2 Similar Products
The four parts on the right have similar specifications to Infineon & IPU50R950CEAKMA2
Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
