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IRF6611123
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IRF6611
  • Manufacturer No:
    IRF6611
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRF6611
  • SKU:
    2694949
  • Description:
    MOSFET N-CH 30V 32A DIRECTFET

IRF6611 Details

MOSFET N-CH 30V 32A DIRECTFET

IRF6611 Specification Parameters

  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • RoHS Status: Non-RoHS Compliant
  • Part Status: Obsolete
  • Qualification Status: Not Qualified
  • Moisture Sensitivity Level (MSL): 3 (168 Hours)
  • Published: 2005
  • Drain to Source Voltage (Vdss): 30V
  • Terminal Position: BOTTOM
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Case Connection: DRAIN
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Series: HEXFET?
  • Vgs(th) (Max) @ Id: 2.25V @ 250μA
  • Package / Case: DirectFET? Isometric MX
  • Avalanche Energy Rating (Eas): 310 mJ
  • Power Dissipation-Max: 3.9W Ta 89W Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 4860pF @ 15V
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Surface Mount: YES
  • Number of Terminations: 3
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 40
  • Transistor Element Material: SILICON
  • DS Breakdown Voltage-Min: 30V
  • Terminal Form: NO LEAD
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Operating Temperature: -40°C~150°C TJ
  • Drain Current-Max (Abs) (ID): 32A
  • Pulsed Drain Current-Max (IDM): 220A
  • JESD-30 Code: R-XBCC-N3
  • Drain-source On Resistance-Max: 0.0026Ohm
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 4.5V
  • Current - Continuous Drain (Id) @ 25°C: 32A Ta 150A Tc
  • Rds On (Max) @ Id, Vgs: 2.6m Ω @ 27A, 10V

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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