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- Manufacturer No：IRL3714ZSPBF
- Manufacturer：
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：
Get the PDF file - SKU：2700941
- Description：HEXFET® Tube Surface Mount N-Channel Mosfet Transistor 36A Tc 36A 35W 5ns
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- Manufacturer No：IRL3714ZSPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRL3714ZSPBF
- SKU：2700941
- Description：HEXFET® Tube Surface Mount N-Channel Mosfet Transistor 36A Tc 36A 35W 5ns
User Guide
User Guide
IRL3714ZSPBF Details
HEXFET® Tube Surface Mount N-Channel Mosfet Transistor 36A Tc 36A 35W 5ns
IRL3714ZSPBF Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- RoHS Status: RoHS Compliant
- Lead Free: Lead Free
- Part Status: Obsolete
- Number of Pins: 3
- Max Operating Temperature: 175°C
- Voltage - Rated DC: 20V
- Drain to Source Voltage (Vdss): 20V
- Dual Supply Voltage: 20V
- FET Type: N-Channel
- Operating Temperature: -55°C~175°C TJ
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Threshold Voltage: 2.1V
- Recovery Time: 12 ns
- Turn On Delay Time: 6 ns
- Width: 9.65mm
- Power Dissipation: 35W
- Continuous Drain Current (ID): 36A
- Resistance: 16mOhm
- Length: 10.668mm
- Power Dissipation-Max: 35W Tc
- Input Capacitance: 550pF
- Vgs(th) (Max) @ Id: 2.55V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
- Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
- Mounting Type: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- REACH SVHC: No SVHC
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Breakdown Voltage: 20V
- Published: 2003
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Turn-Off Delay Time: 10 ns
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Fall Time (Typ): 5 ns
- Series: HEXFET?
- Height: 4.699mm
- Current Rating: 36A
- Supplier Device Package: D2PAK
- Drain to Source Resistance: 16mOhm
- Rise Time: 13ns
- Current - Continuous Drain (Id) @ 25°C: 36A Tc
- Nominal Vgs: 2.1 V
- Rds On Max: 16 mΩ
- Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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