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- Manufacturer No：IRLR3714TRRPBF
- Manufacturer：
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：
Get the PDF file - SKU：2711098
- Description：HEXFET® Tape & Reel (TR) Surface Mount N-Channel Mosfet Transistor 36A Tc 36A 47W 4.5ns
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- Manufacturer No：IRLR3714TRRPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRLR3714TRRPBF
- SKU：2711098
- Description：HEXFET® Tape & Reel (TR) Surface Mount N-Channel Mosfet Transistor 36A Tc 36A 47W 4.5ns
User Guide
User Guide
IRLR3714TRRPBF Details
HEXFET® Tape & Reel (TR) Surface Mount N-Channel Mosfet Transistor 36A Tc 36A 47W 4.5ns
IRLR3714TRRPBF Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Min Operating Temperature: -55°C
- Number of Pins: 3
- Published: 2005
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Breakdown Voltage: 20V
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Continuous Drain Current (ID): 36A
- Power Dissipation: 47W
- Power Dissipation-Max: 47W Tc
- Rise Time: 78ns
- Input Capacitance: 670pF
- Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- RoHS Status: RoHS Compliant
- Part Status: Obsolete
- Max Operating Temperature: 175°C
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 20V
- FET Type: N-Channel
- Operating Temperature: -55°C~175°C TJ
- Drain to Source Resistance: 20mOhm
- Turn-Off Delay Time: 10 ns
- Series: HEXFET?
- Fall Time (Typ): 4.5 ns
- Supplier Device Package: D-Pak
- Current - Continuous Drain (Id) @ 25°C: 36A Tc
- Rds On Max: 20 mΩ
- Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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