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- Manufacturer No：MT29F16G08ABACAWP-ITZ:C
- Manufacturer：
- Category：Memory
- Datasheet：
Get the PDF file - SKU：3920994
- Description：Asynchronous Active Tin 2013 ic memory -40C~85C TA 2.7V 16Gb 50mA
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- Manufacturer No：MT29F16G08ABACAWP-ITZ:C
- Manufacturer：Micron
- Category：Memory
- Datasheet：MT29F16G08ABACAWP-ITZ:C
- SKU：3920994
- Description：Asynchronous Active Tin 2013 ic memory -40C~85C TA 2.7V 16Gb 50mA
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MT29F16G08ABACAWP-ITZ:C Details
Asynchronous Active Tin 2013 ic memory -40C~85C TA 2.7V 16Gb 50mA
MT29F16G08ABACAWP-ITZ:C Specification Parameters
- Part Status: Active
- Mounting Type: Surface Mount
- Number of Functions: 1
- Radiation Hardening: No
- Contact Plating: Tin
- Terminal Position: DUAL
- Supply Voltage: 3.3V
- Packaging: Tray
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Terminal Pitch: 0.5mm
- Number of Terminations: 48
- Pin Count: 48
- Supply Voltage-Min (Vsup): 2.7V
- Memory Interface: Parallel
- Height Seated (Max): 1.2mm
- Word Size: 8b
- Sync/Async: Asynchronous
- Length: 18.4mm
- Package / Case: 48-TFSOP (0.724, 18.40mm Width)
- Memory Size: 16Gb 2G x 8
- Organization: 2GX8
- RoHS Status: ROHS3 Compliant
- Mount: Surface Mount
- Pbfree Code: yes
- JESD-609 Code: e3
- Memory Width: 8
- Factory Lead Time: 6 Weeks
- Operating Supply Voltage: 3.3V
- Published: 2013
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Operating Temperature: -40°C~85°C TA
- Memory Format: FLASH
- Number of Pins: 48
- Supply Voltage-Max (Vsup): 3.6V
- Programming Voltage: 2.7V
- Nominal Supply Current: 50mA
- Memory Type: Non-Volatile
- Voltage - Supply: 2.7V~3.6V
- Page Size: 4kB
- Technology: FLASH - NAND
- Address Bus Width: 1b
- Density: 16 Gb
- Base Part Number: MT29F16G08
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Micron — Manufacturer Introduction
Micron Technology is a world leader in innovative memory solutions that transform how theworld uses Information. Through our global brands - Micron, Crucial and Ballistix - weoffer the industry's broadest portfolio, and are the only company that manufactures today'smajor memory and storage technologies: DRAM, NAND, NOR, and 3D XPoint memory.
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