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- Manufacturer No：MT46H8M16LFCF-10
- Manufacturer：
- Category：Memory
- Datasheet：
Get the PDF file - SKU：3926502
- Description：EAR99 Surface Mount MT46H8M16 Tray ic memory 104MHz 7ns 10mm 90mA
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- Manufacturer No：MT46H8M16LFCF-10
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：MT46H8M16LFCF-10
- SKU：3926502
- Description：EAR99 Surface Mount MT46H8M16 Tray ic memory 104MHz 7ns 10mm 90mA
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MT46H8M16LFCF-10 Details
EAR99 Surface Mount MT46H8M16 Tray ic memory 104MHz 7ns 10mm 90mA
MT46H8M16LFCF-10 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mount: Surface Mount
- Number of Ports: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Memory Width: 16
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage: 1.8V
- Published: 2007
- Length: 10mm
- Terminal Position: BOTTOM
- Number of Terminations: 60
- Terminal Pitch: 0.8mm
- JESD-609 Code: e1
- Output Characteristics: 3-STATE
- Supply Voltage-Min (Vsup): 1.7V
- I/O Type: COMMON
- Access Time: 7ns
- Write Cycle Time - Word, Page: 15ns
- Nominal Supply Current: 90mA
- Refresh Cycles: 4096
- Clock Frequency: 104MHz
- Interleaved Burst Length: 248
- Density: 128 Mb
- HTS Code: 8542.32.00.02
- Standby Current-Max: 0.0002A
- Package / Case: 60-VFBGA
- Mounting Type: Surface Mount
- Number of Functions: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Packaging: Tray
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Operating Supply Voltage: 1.8V
- Height Seated (Max): 1mm
- Part Status: Discontinued
- Number of Pins: 60
- Pin Count: 60
- Memory Interface: Parallel
- Operating Temperature: 0°C~70°C TA
- Memory Type: Volatile
- Data Bus Width: 16b
- Supply Voltage-Max (Vsup): 1.9V
- Memory Format: DRAM
- Voltage - Supply: 1.7V~1.9V
- Terminal Finish: TIN SILVER COPPER
- Additional Feature: AUTO/SELF REFRESH
- Sequential Burst Length: 248
- Address Bus Width: 15b
- Memory Size: 128Mb 8M x 16
- Organization: 8MX16
- Technology: SDRAM - Mobile LPDDR
- Base Part Number: MT46H8M16
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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