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- Manufacturer No：MT48LC16M8A2TG-7E:G
- Manufacturer：
- Category：Memory
- Datasheet：
Get the PDF file - SKU：3931060
- Description：EAR99 Surface Mount MT48LC16M8A2 Tray ic memory 133MHz 5.4ns 22.22mm 165mA
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- Manufacturer No：MT48LC16M8A2TG-7E:G
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：MT48LC16M8A2TG-7E:G
- SKU：3931060
- Description：EAR99 Surface Mount MT48LC16M8A2 Tray ic memory 133MHz 5.4ns 22.22mm 165mA
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MT48LC16M8A2TG-7E:G Details
EAR99 Surface Mount MT48LC16M8A2 Tray ic memory 133MHz 5.4ns 22.22mm 165mA
MT48LC16M8A2TG-7E:G Specification Parameters
- Mounting Type: Surface Mount
- Number of Functions: 1
- ECCN Code: EAR99
- RoHS Status: Non-RoHS Compliant
- Memory Width: 8
- Supply Voltage: 3.3V
- Packaging: Tray
- JESD-609 Code: e0
- Supply Voltage-Min (Vsup): 3V
- Supply Voltage-Max (Vsup): 3.6V
- Memory Interface: Parallel
- Height Seated (Max): 1.2mm
- Operating Temperature: 0°C~70°C TA
- Memory Type: Volatile
- Data Bus Width: 8b
- Number of Pins: 54
- I/O Type: COMMON
- Peak Reflow Temperature (Cel): 235
- Refresh Cycles: 4096
- Technology: SDRAM
- Access Time: 5.4ns
- Standby Current-Max: 0.002A
- Memory Size: 128Mb 16M x 8
- Package / Case: 54-TSOP (0.400, 10.16mm Width)
- Density: 128 Mb
- Organization: 16MX8
- Mount: Surface Mount
- Number of Ports: 1
- Radiation Hardening: No
- Part Status: Obsolete
- Terminal Position: DUAL
- Operating Supply Voltage: 3.3V
- Lead Free: Contains Lead
- Time@Peak Reflow Temperature-Max (s): 30
- Published: 2009
- Terminal Pitch: 0.8mm
- Moisture Sensitivity Level (MSL): 2 (1 Year)
- Terminal Finish: TIN LEAD
- Output Characteristics: 3-STATE
- Voltage - Supply: 3V~3.6V
- Number of Terminations: 54
- Pin Count: 54
- Clock Frequency: 133MHz
- Memory Format: DRAM
- Additional Feature: AUTO/SELF REFRESH
- Nominal Supply Current: 165mA
- Length: 22.22mm
- Interleaved Burst Length: 1248
- Sequential Burst Length: 1248FP
- Address Bus Width: 14b
- Write Cycle Time - Word, Page: 14ns
- Base Part Number: MT48LC16M8A2
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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