BUK7E2R7-30B,127NXP USA Inc.
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    BUK7E2R7-30B,127123
    • Manufacturer No：
      BUK7E2R7-30B,127
    • Manufacturer：
      NXP USA Inc.
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
    • SKU：
      2992992
    • Description：
      N-Channel 30 V 75A (Tc) 300W (Tc) Through Hole I2PAK
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    BUK7E2R7-30B,127
    • Manufacturer No：
      BUK7E2R7-30B,127
    • Manufacturer：
      NXP USA Inc.
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      BUK7E2R7-30B,127
    • SKU：
      2992992
    • Description：
      N-Channel 30 V 75A (Tc) 300W (Tc) Through Hole I2PAK

    User Guide

    User Guide

    BUK7E2R7-30B,127 Details

    N-Channel 30 V 75A (Tc) 300W (Tc) Through Hole I2PAK

    BUK7E2R7-30B,127 Specification Parameters

    • Surface Mount: NO
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Number of Elements: 1
    • JESD-609 Code: e3
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Packaging: Tube
    • Pin Count: 3
    • Published: 2010
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Transistor Element Material: SILICON
    • Drain to Source Voltage (Vdss): 30V
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Subcategory: FET General Purpose Power
    • JESD-30 Code: R-PSIP-T3
    • Additional Feature: LOGIC LEVEL COMPATIBLE
    • Vgs(th) (Max) @ Id: 4V @ 1mA
    • Power Dissipation-Max: 300W Tc
    • Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
    • Rds On (Max) @ Id, Vgs: 2.7m Ω @ 25A, 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6212pF @ 25V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • ECCN Code: EAR99
    • Part Status: Obsolete
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Number of Terminations: 3
    • Qualification Status: Not Qualified
    • Reach Compliance Code: not_compliant
    • Terminal Finish: Tin (Sn)
    • Terminal Position: SINGLE
    • DS Breakdown Voltage-Min: 30V
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • Drain Current-Max (Abs) (ID): 75A
    • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
    • HTS Code: 8541.29.00.75
    • Series: TrenchMOS?
    • Current - Continuous Drain (Id) @ 25°C: 75A Tc
    • Drain-source On Resistance-Max: 0.0027Ohm
    • Avalanche Energy Rating (Eas): 2300 mJ
    • Pulsed Drain Current-Max (IDM): 967A
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