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- Manufacturer No：BSP250,135
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：
Get the PDF file - SKU：3973022
- Description：BSP250 Series -30V 250 mOhm P-Channel Enhancement Mode D-MOS Transistor -SOT-223
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- Manufacturer No：BSP250,135
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：BSP250,135
- SKU：3973022
- Description：BSP250 Series -30V 250 mOhm P-Channel Enhancement Mode D-MOS Transistor -SOT-223
User Guide
User Guide
BSP250,135 Details
BSP250 Series -30V 250 mOhm P-Channel Enhancement Mode D-MOS Transistor -SOT-223
BSP250,135 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Surface Mount: YES
- Lead Free: Lead Free
- Terminal Position: DUAL
- Number of Terminations: 4
- Drain Current-Max (Abs) (ID): 3A
- Terminal Form: GULL WING
- Factory Lead Time: 4 Weeks
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Operating Temperature: 150°C TJ
- Case Connection: DRAIN
- Package / Case: TO-261-4, TO-261AA
- Max Dual Supply Voltage: -30V
- Power Dissipation: 1.65W
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 20V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Pins: 4
- Pin Count: 4
- Continuous Drain Current (ID): 3A
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 30V
- Pulsed Drain Current-Max (IDM): 12A
- Operating Mode: ENHANCEMENT MODE
- Published: 1998
- Configuration: SINGLE WITH BUILT-IN DIODE
- FET Type: P-Channel
- Resistance: 250mOhm
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 3A Tc
- Rds On (Max) @ Id, Vgs: 250m Ω @ 1A, 10V
- Power Dissipation-Max: 1.65W Ta
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