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- Manufacturer No：PBSS4032SN,115
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - Bipolar (BJT) - Arrays
- Datasheet：
Get the PDF file - SKU：3954351
- Description：TRANS 2NPN 30V 5.7A 8SO
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- Manufacturer No：PBSS4032SN,115
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - Bipolar (BJT) - Arrays
- Datasheet：PBSS4032SN,115
- SKU：3954351
- Description：TRANS 2NPN 30V 5.7A 8SO
User Guide
User Guide
PBSS4032SN,115 Details
TRANS 2NPN 30V 5.7A 8SO
PBSS4032SN,115 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- Number of Pins: 8
- Pin Count: 8
- Terminal Form: GULL WING
- Factory Lead Time: 4 Weeks
- Time@Peak Reflow Temperature-Max (s): 30
- Published: 2010
- Collector Emitter Breakdown Voltage: 30V
- Collector Base Voltage (VCBO): 30V
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Polarity: NPN
- Current - Collector Cutoff (Max): 100nA
- Transition Frequency: 140MHz
- Gain Bandwidth Product: 140MHz
- Power Dissipation: 2.3W
- Transistor Type: 2 NPN (Dual)
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e4
- Number of Terminations: 8
- Emitter Base Voltage (VEBO): 5V
- Peak Reflow Temperature (Cel): 260
- Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)
- Element Configuration: Dual
- Transistor Element Material: SILICON
- Collector Emitter Voltage (VCEO): 30V
- Max Breakdown Voltage: 30V
- Transistor Application: SWITCHING
- Operating Temperature: 150°C TJ
- hFE Min: 300
- Frequency: 140MHz
- Max Power Dissipation: 2.3W
- Max Collector Current: 5.7A
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A 2V
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