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- Manufacturer No：PBSS4630PA,115
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：
- SKU：3981598
- Description：Bipolar (BJT) Transistor NPN 115MHz Surface Mount 3-HUSON (2x2)
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- Manufacturer No：PBSS4630PA,115
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：PBSS4630PA,115
- SKU：3981598
- Description：Bipolar (BJT) Transistor NPN 115MHz Surface Mount 3-HUSON (2x2)
User Guide
User Guide
PBSS4630PA,115 Details
Bipolar (BJT) Transistor NPN 115MHz Surface Mount 3-HUSON (2x2)
PBSS4630PA,115 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Factory Lead Time: 8 Weeks
- Number of Pins: 3
- Peak Reflow Temperature (Cel): 260
- Published: 2010
- Transistor Element Material: SILICON
- Collector Emitter Breakdown Voltage: 30V
- Collector Base Voltage (VCBO): 30V
- Emitter Base Voltage (VEBO): 6V
- Transistor Application: SWITCHING
- Polarity/Channel Type: NPN
- Current - Collector Cutoff (Max): 100nA
- hFE Min: 180
- Gain Bandwidth Product: 115MHz
- Power Dissipation: 2.1W
- Package / Case: 3-PowerUDFN
- DC Current Gain (hFE) (Min) @ Ic, Vce: 260 @ 2A 2V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Terminal Position: DUAL
- Number of Terminations: 3
- Pin Count: 3
- Time@Peak Reflow Temperature-Max (s): 30
- Terminal Finish: Tin (Sn)
- Element Configuration: Single
- Collector Emitter Voltage (VCEO): 30V
- Max Breakdown Voltage: 30V
- Max Collector Current: 6A
- Transistor Type: NPN
- Operating Temperature: 150°C TJ
- Case Connection: COLLECTOR
- Frequency: 115MHz
- Transition Frequency: 115MHz
- Max Power Dissipation: 2.1W
- Vce Saturation (Max) @ Ib, Ic: 275mV @ 300mA, 6A
- Base Part Number: PBSS4630
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