PEMD12,115Nexperia USA Inc.
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    PEMD12,115
    • Manufacturer No：
      PEMD12,115
    • Manufacturer：
      Nexperia USA Inc.
    • Category：
      Transistors - Bipolar (BJT) - Arrays, Pre-Biased
    • Datasheet：
      PEMD12,115
    • SKU：
      3963393
    • Description：
      TRANS PREBIAS NPN/PNP SOT666

    User Guide

    User Guide

    PEMD12,115 Details

    TRANS PREBIAS NPN/PNP SOT666

    PEMD12,115 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Max Breakdown Voltage: 50V
    • Number of Terminations: 6
    • Pin Count: 6
    • REACH SVHC: No SVHC
    • Min Operating Temperature: -65°C
    • Factory Lead Time: 4 Weeks
    • Max Operating Temperature: 150°C
    • Terminal Finish: Tin (Sn)
    • Width: 6.35mm
    • hFE Min: 80
    • Current - Collector Cutoff (Max): 1μA
    • Transistor Application: SWITCHING
    • Power Dissipation: 300mW
    • Package / Case: SOT-563, SOT-666
    • Resistor - Emitter Base (R2): 47k Ω
    • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500μA, 10mA
    • Base Part Number: MD12
    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Collector Emitter Breakdown Voltage: 50V
    • Collector Emitter Voltage (VCEO): 50V
    • Number of Pins: 6
    • Termination: SMD/SMT
    • Peak Reflow Temperature (Cel): 260
    • Published: 2011
    • Time@Peak Reflow Temperature-Max (s): 40
    • Element Configuration: Dual
    • Length: 6.35mm
    • Height: 6.35mm
    • Max Collector Current: 100mA
    • Terminal Form: FLAT
    • Max Power Dissipation: 300mW
    • Weight: 4.535924g
    • Polarity: NPN, PNP
    • Resistor - Base (R1): 47k Ω
    • Additional Feature: BUILT-IN BIAS RESISTOR RATIO IS 1
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA 5V
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