PEMD48,115Nexperia USA Inc.
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    PEMD48,115123
    Inventory:4000
    • Qty Unit Price price
    • 1 $0.48 $0.48
    • 10 $0.475 $4.75
    • 100 $0.47 $47
    • 1000 $0.465 $465
    • 10000 $0.46 $4600

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    PEMD48,115
    • Manufacturer No：
      PEMD48,115
    • Manufacturer：
      Nexperia USA Inc.
    • Category：
      Transistors - Bipolar (BJT) - Arrays, Pre-Biased
    • Datasheet：
      PEMD48,115
    • SKU：
      3958410
    • Description：
      TRANS PREBIAS NPN/PNP SOT666

    User Guide

    User Guide

    PEMD48,115 Details

    TRANS PREBIAS NPN/PNP SOT666

    PEMD48,115 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Radiation Hardening: No
    • Collector Emitter Breakdown Voltage: 50V
    • Collector Emitter Voltage (VCEO): 50V
    • Number of Pins: 6
    • Termination: SMD/SMT
    • Peak Reflow Temperature (Cel): 260
    • Published: 2011
    • Time@Peak Reflow Temperature-Max (s): 30
    • Element Configuration: Dual
    • Terminal Finish: Tin (Sn)
    • Max Collector Current: 100mA
    • Current - Collector Cutoff (Max): 1μA
    • Width: 1.3mm
    • Max Power Dissipation: 300mW
    • Length: 1.7mm
    • Package / Case: SOT-563, SOT-666
    • Polarity: NPN, PNP
    • Transition Frequency: 230MHz
    • Additional Feature: BUILT IN BIAS RESISTANCE RATIO IS 1
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA 5V / 100 @ 10mA 5V
    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Max Breakdown Voltage: 50V
    • Number of Terminations: 6
    • Pin Count: 6
    • REACH SVHC: No SVHC
    • Min Operating Temperature: -65°C
    • Factory Lead Time: 4 Weeks
    • Max Operating Temperature: 150°C
    • Emitter Base Voltage (VEBO): 10V
    • hFE Min: 80
    • Height: 600μm
    • Terminal Form: FLAT
    • Transistor Application: SWITCHING
    • Power Dissipation: 300mW
    • Weight: 4.535924g
    • Collector Emitter Saturation Voltage: 150mV
    • Resistor - Emitter Base (R2): 47k Ω
    • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500μA, 10mA / 100mV @ 250μA, 5mA
    • Base Part Number: P*MD48
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