Add to like
Add to project list
123
- Home >
- Manufacturer No：STB20NM50FDT4
- Manufacturer：
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：
Get the PDF file - SKU：4580963
- Description：MOSFET N-CH 500V 20A D2PAK
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:0
- Qty Unit Price price
- 1 $6.142 $6.142
- 10 $6.081 $60.81
- 100 $6.02 $602
- 1000 $5.96 $5960
- 10000 $5.9 $59000
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：STB20NM50FDT4
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STB20NM50FDT4
- SKU：4580963
- Description：MOSFET N-CH 500V 20A D2PAK
User Guide
User Guide
STB20NM50FDT4 Details
MOSFET N-CH 500V 20A D2PAK
STB20NM50FDT4 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Pin Count: 3
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 500V
- Part Status: Not For New Designs
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Terminal Finish: Matte Tin (Sn) - annealed
- Operating Temperature: 150°C TJ
- Subcategory: FET General Purpose Power
- Pulsed Drain Current-Max (IDM): 80A
- Rise Time: 20 ns
- Resistance: 250mOhm
- Turn On Delay Time: 22 ns
- Power Dissipation: 192W
- Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
- Rds On (Max) @ Id, Vgs: 250m Ω @ 10A, 10V
- Series: FDmesh?
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Pins: 3
- Terminal Form: GULL WING
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 30V
- Continuous Drain Current (ID): 20A
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Peak Reflow Temperature (Cel): 245
- JESD-30 Code: R-PSSO-G2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Fall Time (Typ): 15 ns
- Vgs (Max): ±30V
- Vgs(th) (Max) @ Id: 5V @ 250μA
- Current - Continuous Drain (Id) @ 25°C: 20A Tc
- Avalanche Energy Rating (Eas): 700 mJ
- Power Dissipation-Max: 192W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V
- Base Part Number: STB20N
Search for similar products
STB20NM50FDT4 Similar Products
The four parts on the right have similar specifications to STMicroelectronics & STB20NM50FDT4
STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
