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- Manufacturer No：STB32N65M5
- Manufacturer：
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：
Get the PDF file - SKU：4558582
- Description：MOSFET POWER MOSFET N-CH 650V
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- 10 $1668.059 $16680.59
- 100 $1651.543 $165154.3
- 1000 $1635.191 $1635191
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- Manufacturer No：STB32N65M5
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STB32N65M5
- SKU：4558582
- Description：MOSFET POWER MOSFET N-CH 650V
User Guide
User Guide
STB32N65M5 Details
MOSFET POWER MOSFET N-CH 650V
STB32N65M5 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 3
- REACH SVHC: No SVHC
- Gate to Source Voltage (Vgs): 25V
- Transistor Element Material: SILICON
- Factory Lead Time: 17 Weeks
- Packaging: Cut Tape (CT)
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Terminal Finish: Matte Tin (Sn) - annealed
- Operating Temperature: 150°C TJ
- Subcategory: FET General Purpose Power
- Drain to Source Breakdown Voltage: 650V
- Lifecycle Status: ACTIVE (Last Updated: 7 months ago)
- Rise Time: 12 ns
- Vgs(th) (Max) @ Id: 5V @ 250μA
- Vgs (Max): ±25V
- Turn-Off Delay Time: 53 ns
- Pulsed Drain Current-Max (IDM): 96A
- Length: 10.75mm
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
- Additional Feature: AVALANCHE ENERGY RATED
- Rds On (Max) @ Id, Vgs: 119m Ω @ 12A, 10V
- Base Part Number: STB32N
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Pin Count: 4
- Terminal Form: GULL WING
- Time@Peak Reflow Temperature-Max (s): 30
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Power Dissipation: 150W
- FET Type: N-Channel
- Threshold Voltage: 4V
- Operating Mode: ENHANCEMENT MODE
- Peak Reflow Temperature (Cel): 245
- JESD-30 Code: R-PSSO-G2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Height: 4.6mm
- Continuous Drain Current (ID): 24A
- Width: 10.4mm
- Fall Time (Typ): 16 ns
- Turn On Delay Time: 53 ns
- Power Dissipation-Max: 150W Tc
- Current - Continuous Drain (Id) @ 25°C: 24A Tc
- Series: MDmesh? V
- Resistance: 119mOhm
- Avalanche Energy Rating (Eas): 650 mJ
- Input Capacitance (Ciss) (Max) @ Vds: 3320pF @ 100V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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