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- Manufacturer No：STB80NE03L-06T4
- Manufacturer：
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：
Get the PDF file - SKU：4563519
- Description：STripFET™ Tape & Reel (TR) Surface Mount N-Channel Mosfet Transistor 80A Tc 80A 150W 165ns
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- Manufacturer No：STB80NE03L-06T4
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STB80NE03L-06T4
- SKU：4563519
- Description：STripFET™ Tape & Reel (TR) Surface Mount N-Channel Mosfet Transistor 80A Tc 80A 150W 165ns
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User Guide
STB80NE03L-06T4 Details
STripFET™ Tape & Reel (TR) Surface Mount N-Channel Mosfet Transistor 80A Tc 80A 150W 165ns
STB80NE03L-06T4 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- JESD-609 Code: e3
- Part Status: Obsolete
- Qualification Status: Not Qualified
- Terminal Finish: Matte Tin (Sn)
- Reach Compliance Code: not_compliant
- Element Configuration: Single
- Voltage - Rated DC: 30V
- Power Dissipation: 150W
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- JESD-30 Code: R-PSSO-G2
- Subcategory: FET General Purpose Power
- Current Rating: 80A
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Current - Continuous Drain (Id) @ 25°C: 80A Tc
- Power Dissipation-Max: 150W Tc
- Drain-source On Resistance-Max: 0.008Ohm
- Avalanche Energy Rating (Eas): 600 mJ
- Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 5V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Lead Free: Lead Free
- Pin Count: 4
- Terminal Form: GULL WING
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Breakdown Voltage: 30V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Peak Reflow Temperature (Cel): 245
- Case Connection: DRAIN
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Continuous Drain Current (ID): 80A
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- Pulsed Drain Current-Max (IDM): 320A
- Fall Time (Typ): 165 ns
- Series: STripFET?
- Rise Time: 260ns
- Base Part Number: STB80N
- Rds On (Max) @ Id, Vgs: 6m Ω @ 40A, 10V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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