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US1AHE3_A/I123
  • Manufacturer No:
    US1AHE3_A/I
  • Manufacturer:
    Vishay Semiconductor Diodes Division
  • Category:
    Diodes - Rectifiers - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    13084321
  • Description:
    DIODE GEN PURP 50V 1A DO214AC
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US1AHE3_A/I
  • Manufacturer No:
    US1AHE3_A/I
  • Manufacturer:
    Vishay Semiconductor Diodes Division
  • Category:
    Diodes - Rectifiers - Single
  • Datasheet:
    US1AHE3_A/I
  • SKU:
    13084321
  • Description:
    DIODE GEN PURP 50V 1A DO214AC

US1AHE3_A/I Details

DIODE GEN PURP 50V 1A DO214AC

US1AHE3_A/I Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Terminal Position: DUAL
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Reach Compliance Code: unknown
  • Operating Temperature (Max): 150°C
  • Average Rectified Current: 1A
  • Diode Element Material: SILICON
  • Diode Type: Standard
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Package / Case: DO-214AC, SMA
  • Reverse Recovery Time: 50 ns
  • Additional Feature: FREE WHEELING DIODE
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Base Part Number: US1A
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • JESD-609 Code: e3
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Published: 2016
  • Max Reverse Voltage (DC): 50V
  • Terminal Finish: Matte Tin (Sn)
  • Output Current-Max: 1A
  • Factory Lead Time: 11 Weeks
  • Configuration: Single
  • Operating Temperature - Junction: -55°C~150°C
  • Series: Automotive, AEC-Q101
  • Terminal Form: C BEND
  • JESD-30 Code: R-PDSO-C2
  • Capacitance @ Vr, F: 15pF @ 4V 1MHz
  • Current - Reverse Leakage @ Vr: 10μA @ 50V

Excellent

Based on reviews

Excellent

Based on reviews

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