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- Manufacturer No：VS-8EWS08STRR-M3
- Manufacturer：Vishay Semiconductor Diodes Division
- Category：Diodes - Rectifiers - Single
- Datasheet：
Get the PDF file - SKU：13228108
- Description：Diode 800V 8A 3-Pin(2+Tab) DPAK T/R
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- Manufacturer No：VS-8EWS08STRR-M3
- Manufacturer：Vishay Semiconductor Diodes Division
- Category：Diodes - Rectifiers - Single
- Datasheet：VS-8EWS08STRR-M3
- SKU：13228108
- Description：Diode 800V 8A 3-Pin(2+Tab) DPAK T/R
User Guide
User Guide
VS-8EWS08STRR-M3 Details
Diode 800V 8A 3-Pin(2+Tab) DPAK T/R
VS-8EWS08STRR-M3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Phases: 1
- JESD-609 Code: e3
- Factory Lead Time: 12 Weeks
- Pin Count: 3
- Terminal Form: GULL WING
- Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
- Time@Peak Reflow Temperature-Max (s): 10
- Max Operating Temperature: 150°C
- Diode Type: Standard
- Terminal Position: SINGLE
- Average Rectified Current: 8A
- Max Reverse Voltage (DC): 800V
- Speed: Standard Recovery >500ns, > 200mA (Io)
- JESD-30 Code: R-PSSO-G2
- Peak Non-Repetitive Surge Current: 150A
- Element Configuration: Common Anode
- JEDEC-95 Code: TO-252AA
- Application: HIGH VOLTAGE HIGH POWER
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Min Operating Temperature: -55°C
- Number of Pins: 3
- Qualification Status: Not Qualified
- Peak Reflow Temperature (Cel): 260
- Reach Compliance Code: unknown
- Published: 2015
- Diode Element Material: SILICON
- Operating Temperature - Junction: -55°C~150°C
- Output Current-Max: 8A
- HTS Code: 8541.10.00.80
- Subcategory: Rectifier Diodes
- Forward Voltage: 1.1V
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Case Connection: CATHODE
- Non-rep Pk Forward Current-Max: 120A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
- Current - Reverse Leakage @ Vr: 50μA @ 800V
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